SBOS092C June   1998  – January 2026 XTR106

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Linearization
      2. 6.3.2 Reverse-Voltage Protection
      3. 6.3.3 Overvoltage Surge Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 External Transistor
      2. 7.1.2 Loop Power Supply
      3. 7.1.3 Bridge Balance
      4. 7.1.4 Underscale Current
      5. 7.1.5 Low-Impedance Bridges
      6. 7.1.6 Other Sensor Types
      7. 7.1.7 Radio Frequency Interference
      8. 7.1.8 Error Analysis
    2. 7.2 Typical Applications
    3. 7.3 Layout
    4. 7.4 Layout Guidelines
  9. 8 Device and Documentation Support
    1. 8.1 Device Nomenclature
    2. 8.2 Documentation Support
    3. 8.3 Related Documentation
    4. 8.4 Receiving Notification of Documentation Updates
    5. 8.5 Support Resources
    6. 8.6 Trademarks
    7. 8.7 Electrostatic Discharge Caution
    8. 8.8 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.4 Electrical Characteristics

at TA = +25°C, V+ = 24V, TIP29C external transistor, and all chip site origins (CSO), unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUTPUT
IO Output current equation VIN in Volts and RG in Ω IO = VIN * (40/RG) + 4mA A
Output current, specified range 4 20 mA
IOVER Overscale limit 24 28 30 mA
IUNDER Underscale limit IREG = 0, IREF = 0 1 1.6 2.2 mA
IREF + IREG = 2.5mA 2.9 3.4 4
ZERO OUTPUT
IZERO Zero output (1) (VIN = 0V, RG = ∞) 4 mA
Initial error
XTR106P, XTR106U

 ±5 ±25 µA
XTR106PA, XTR106UA ±5 ±50
vs temperature TA = –40°C to +85°C ±0.07 ±0.9 µA/℃
vs supply voltage, V+ V+ = 7.5V to 36V 0.04 0.2 µA/V
vs common-mode voltage (CMRR) VCM = 1.1V to 3.5V (5) 0.02 µA/V
vs VREG (IO) 0.8 µA/mA
in Noise 0.1Hz to 10Hz CSO: TID 0.016 µApp
CSO: SHE 0.035
SPAN
S Span equation (transconductance) S = 40 / RG A/V
Untrimmed error Full scale (VIN) = 50mV XTR106P, XTR106U ±0.05 ±0.2 %
XTR106PA, XTR106UA ±0.05 ±0.4
vs temperature (2) TA = –40°C to +85°C ±3 ±25 ppm/°C
Nonlinearity: ideal input (3) Full Scale (VIN) = 50mV ±0.001 ±0.01 %
INPUT
VOS Offset voltage (4) VCM = 2.5V XTR106P, XTR106U ±50 ±100 µV
XTR106PA, XTR106UA ±50 ±250
vs temperature TA = –40°C to +85°C XTR106P, XTR106U ±0.25 ±1.5 µV/°C
XTR106PA, XTR106UA ±0.25 ±3
vs supply voltage, V+ V+ = 7.5V to 36V ±0.1 ±3 µV/V
CMRR vs common-mode voltage, RTI VCM = 1.1V to 3.5V (5) XTR106P, XTR106U ±10 ±50 µV/V
XTR106PA, XTR106UA ±10 ±100
VCM Common-mode range (5) 1.1 3.5 V
IB Input bias current XTR106P, XTR106U 5 25 nA
XTR106PA, XTR106UA 5 50
vs temperature TA = –40°C to +85°C 20 pA/°C
IOS Input offset current XTR106P, XTR106U ±0.2 ±3 nA
XTR106PA, XTR106UA ±0.2 ±10
vs temperature TA = –40°C to +85°C 5 pA/°C
ZIN Impedance Differential 0.1 || 1 GΩ || pF
Common-mode CSO: SHE 5 || 10
CSO: TID 5 || 10
Vn Noise 0.1Hz to 10Hz   0.6   µVpp
VOLTAGE REFERENCES
VREF2.5 Initial 2.5V Reference Voltage Lin Polarity connected to VREF, RLIN = 0 (5) 2.5 V
VREF5 Initial 5V Reference Voltage 5
Accuracy VREF = 2.5V or 5V XTR106P, XTR106U ±0.05 ±0.25 %
XTR106PA, XTR106UA ±0.05 ±0.5
vs temperature (6) TA = –40°C to +85°C XTR106P, XTR106U ±20 ±35 ppm/℃
XTR106PA, XTR106UA ±20 ±75
vs supply voltage, V+ V+ = 7.5V to 36V ±5 ±20 ppm/V
vs load IREF = 0mA to 2.5mA
60
ppm/mA
Noise 0.1Hz to 10Hz 10 µVpp
VREG
VREG Regulator Voltage (5) 5.1 V
Accuracy IREG = 0 ±0.02 ±0.1 V
vs temperature TA = –40°C to +85°C CSO: SHE ±0.3 mV/°C
CSO: TID ±0.5
vs supply voltage, V+ V+ = 7.5V to 36V 1 mV/V
IREG Output current See typical curves mA
Output impedance IREG = 0mA to 2.5mA 80 Ω
LINEARIZATION
RLIN RLIN (external) equation (7) KLIN in Ω, B is nonlinearity relative to VFS RLIN = KLIN * 4B / (1 - 2B) Ω
KLIN KLIN linearization factor VREF = 5V 6.645 kΩ
VREF = 2.5V 9.905
RLIN Accuracy ±1 ±5 %
vs Temperature TA = -40 ℃ to +85 ℃ ±50 ±100 ppm/°C
B Maximum correctable sensor nonlinearity VREF = 5V ±5 % of FS
VREF = 2.5V –2.5, +5
(1) Describes accuracy of the 4mA low-scale offset current. Does not include input amplifier effects. Can be trimmed to zero.
(2) Does not include initial error or TCR of gain-setting resistor RG.
(3) Increasing the full-scale input range improves nonlinearity.
(4) Does not include zero output initial error.
(5) Voltage measured with respect to IRET pin.
(6) Calculated using the box method: (MAX(-40 ℃ to 85 ℃) - MIN(-40 ℃ to 85 ℃) / (85 ℃ - (-40 ℃)).
(7) See Linearization (Section 6.3.1) for detailed explanation. VFS = full-scale VIN