SBOS344E September   2005  – January 2026 XTR117

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Reverse-Voltage Protection
      2. 7.3.2 Overvoltage Surge Protection
      3. 7.3.3 VSON Package
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 External Transistor
      2. 8.1.2 Minimum Output Current
      3. 8.1.3 Offsetting the Input
      4. 8.1.4 Radio Frequency Interference
      5. 8.1.5 Maximum Output Current
      6. 8.1.6 Circuit Stability
    2. 8.2 Typical Application
    3. 8.3 Layout
      1. 8.3.1 Layout Guidelines
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Device Nomenclature
    2. 9.2 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.5 Electrical Characteristics

at TA = 25°C, V+ = 24V, RIN = 20kΩ and TIP29C external transistor, all chip site origins (CSO), unless otherwise noted.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OUTPUT
IO Output current equation IO = IIN * 100
Output current, linear range 0.20 25 mA
ILIM Over-scale limit 32 mA
IMIN Under-scale limit IREG = 0 0.13 0.20 mA
SPAN
S Span (current gain) 100 A/A
Error (1) IOUT = 200µA to 25mA ±0.05 ±0.4 %
TA = –40°C to +125°C ±3 ±20 ppm/°C
Nonlinearity IOUT = 200µA to 25mA ±0.003 ±0.02 %
INPUT
VOS Offset voltage (op amp) IIN = 40µA ±100 ±500 µV
TA = –40°C to +125°C  ±0.7 ±6 µV/°C
V+ = 7.5V to 36V ±0.1 ±2 µV/V
IB Bias current CSO: SHE   –35   nA
CSO: TID –50
Bias current vs temperature TA = –40°C to +125°C  CSO: SHE   150   pA/°C
CSO: TID 300
en Noise 0.1Hz to 10Hz   0.6   µVpp
DYNAMIC RESPONSE
Small signal bandwidth CLOOP = 0, RL = 0 380 kHz
Slew rate CSO: SHE 3.2 mA/µs
CSO: TID 5
VOLTAGE REGULATOR (VREG)
VREG Regulator voltage (2) 5 V
Voltage accuracy IREG = 0 CSO: SHE ±0.05 ±0.1 V
CSO: TID ±0.003 ±0.1
Voltage accuracy vs temperature IREG = 0 TA = –40°C to +125°C ±0.1 mV/°C
Voltage accuracy vs power supply, V+ V+ = 7.5V to 36V, IREG = 0 CSO: SHE 1 mV/V
CSO: TID 0.5
Voltage accuracy vs VREG current See Section 6.6
Short circuit current 12 mA
POWER SUPPLY
IQ Quiescent current CSO: SHE 130 200 μA
CSO: TID 105 200
TA = –40°C to 125°C 250
(1) Does not include initial error or TCR of RIN.
(2) Voltage measured with respect to IRET pin.