SBOS629B April   2018  – May 2025 OPA858

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Input and ESD Protection
      2. 8.3.2 Feedback Pin
      3. 8.3.3 Wide Gain-Bandwidth Product
      4. 8.3.4 Slew Rate and Output Stage
      5. 8.3.5 Current Noise
    4. 8.4 Device Functional Modes
      1. 8.4.1 Split-Supply and Single-Supply Operation
      2. 8.4.2 Power-Down Mode
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Using the OPA858 as a Transimpedance Amplifier
    2. 9.2 Typical Applications
      1. 9.2.1 TIA in an Optical Front-End System
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) OPA858 UNIT
DSG (WSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 80.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 100 °C/W
RθJB Junction-to-board thermal resistance 45 °C/W
ΨJT Junction-to-top characterization parameter 6.8 °C/W
ΨJB Junction-to-board characterization parameter 45.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 22.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.