SBOS980F May   2019  – April 2025 TLV9001-Q1 , TLV9002-Q1 , TLV9004-Q1

PRODMIX  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information for Single Channel
    5. 6.5 Thermal Information for Dual Channel
    6. 6.6 Thermal Information for Quad Channel
    7. 6.7 Electrical Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Voltage
      2. 7.3.2 Rail-to-Rail Input
      3. 7.3.3 Rail-to-Rail Output
      4. 7.3.4 Overload Recovery
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 TLV900x-Q1 Low-Side, Current Sensing Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Single-Supply Photodiode Amplifier
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Input and ESD Protection
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.7 Electrical Characteristics

For VS = (V+) – (V–) = 1.8V to 5.5V (±0.9V to ±2.75V), TA = 25°C, RL = 10kΩ connected to VS / 2, and VCM = VOUT = VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage Vs = 5V ±0.4 ±1.85 mV
Vs = 5V, TA = –40°C to 125°C ±2 mV
dVOS/dT VOS vs temperature TA = –40°C to 125°C ±0.6 μV/°C
PSRR Power-supply rejection ratio VS = 1.8V to 5.5V, VCM = (V–)
 		 80 105 dB
INPUT VOLTAGE RANGE
VCM Common-mode voltage range No phase reversal, rail-to-rail input (V–) – 0.1 (V+) + 0.1 V
CMRR Common-mode rejection ratio VS = 1.8V, (V–) – 0.1V < VCM < (V+) – 1.4V, 
TA = –40°C to 125°C		 86 dB
VS = 5.5V, (V–) – 0.1V < VCM < (V+) – 1.4V, 
TA = –40°C to 125°C		 95 dB
VS = 5.5V, (V–) – 0.1V < VCM < (V+) + 0.1V, 
TA = –40°C to 125°C		 63 77 dB
VS = 1.8V, (V–) – 0.1V < VCM < (V+) + 0.1V, 
TA = –40°C to 125°C		 68 dB
INPUT BIAS CURRENT
IB Input bias current Vs = 5V ±5 pA
IOS Input offset current ±2 pA
NOISE
En Input voltage noise (peak-to-peak) ƒ = 0.1Hz to 10Hz, Vs = 5V 4.7 μVPP
en Input voltage noise density ƒ = 1kHz, Vs = 5V 30 nV/√Hz
ƒ = 10kHz, Vs = 5V 27 nV/√Hz
in Input current noise density ƒ = 1kHz, Vs = 5V 23 fA/√Hz
INPUT CAPACITANCE
CID Differential 1.5 pF
CIC Common-mode 5 pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain VS = 5.5V, (V–) + 0.05V < VO < (V+) – 0.05V,
RL = 10kΩ		 104 117 dB
VS = 1.8V, (V–) + 0.04V < VO < (V+) – 0.04V,
RL = 10kΩ		 100 dB
VS = 1.8V, (V–) + 0.1V < VO < (V+) – 0.1V,
RL = 2kΩ		 115 dB
VS = 5.5V, (V–) + 0.15V < VO < (V+) – 0.15V,
RL = 2kΩ		 130 dB
FREQUENCY RESPONSE
GBW Gain-bandwidth product Vs = 5V 1 MHz
φm Phase margin VS = 5.5V, G = 1 78 degrees
SR Slew rate Vs = 5V 2 V/µs
tS Settling time To 0.1%, VS = 5V, 2V Step , G = +1, CL = 100pF 2.5 μs
To 0.01%, VS = 5V, 2V Step , G = +1, CL = 100pF 3 μs
tOR Overload recovery time VS = 5V, VIN × gain > VS 0.85 μs
THD+N Total harmonic distortion + noise VS = 5.5V, VCM = 2.5V, VO = 1VRMS, G = +1,
f = 1kHz, 80kHz measurement BW		 0.004 %
OUTPUT
VO Voltage output swing from supply rails VS = 5.5V, RL = 10kΩ 10 20 mV
VS = 5.5V, RL = 2kΩ 35 55 mV
ISC Short-circuit current Vs = 5.5V ±40 mA
ZO Open-loop output impedance Vs = 5V, f = 1MHz 1200 Ω
POWER SUPPLY
VS Specified voltage range 1.8 (±0.9) 5.5 (±2.75) V
IQ Quiescent current per amplifier IO = 0mA, VS = 5.5V 60 80 µA
IO = 0mA, VS = 5.5V, TLV9002RQDGKRQ1 60 85 µA
IO = 0mA, VS = 5.5V, TA = –40°C to 125°C 85 µA
Power-on time VS = 0V to 5V, to 90% IQ level 50 µs