SBOSA78 March   2026 INA1H182-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Setting the Gain
        1. 6.3.1.1 Gain Drift
      2. 6.3.2 EMI Rejection
      3. 6.3.3 Input Common-Mode Range
      4. 6.3.4 Input Protection
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Reference Pin
      2. 7.1.2 Input Bias Current Return Path
    2. 7.2 Typical Applications
      1. 7.2.1 Resistor Temperature Detector Signal Conditioning Circuit
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Procedure
        3. 7.2.1.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

8.5 Trademarks

TI E2E™ is a trademark of Texas Instruments.

Bluetooth® is a registered trademark of Bluetooth SIG, Inc.

PhotoMOS® is a registered trademark of Panasonic Electric Works Europe AG.

All trademarks are the property of their respective owners.