SBOSAG5B December   2024  – December 2025 TLV2888 , TLV888

PRODMIX  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information: TLV888
    5. 5.5 Thermal Information: TLV2888
    6. 5.6 Thermal Information: TLV4888
    7. 5.7 Electrical Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Input Common-Mode Range
      2. 6.3.2 Phase-Reversal Protection
      3. 6.3.3 Chopping Transients
      4. 6.3.4 EMI Rejection
      5. 6.3.5 Electrical Overstress
      6. 6.3.6 MUX-Friendly Inputs
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Basic Noise Calculations
    2. 7.2 Typical Applications
      1. 7.2.1 High-Side Current Sensing
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
      2. 7.2.2 Programmable Current Source
      3. 7.2.3 Programmable Current Source For A Grounded Load
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 PSpice® for TI
        2. 8.1.1.2 TINA-TI™ Simulation Software (Free Download)
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.7 Electrical Characteristics

at TA = 25°C, VS = 4.5V to 36V, VCM = VOUT = VS / 2, and RLOAD = 10kΩ connected to VS / 2 (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
OFFSET VOLTAGE
VOS Input offset voltage(1) ±3 ±15 µV
TA = –40°C to +125°C ±20
dVOS/dT Input offset voltage drift(1) TA = –40°C to +125°C ±0.01 ±0.05 µV/°C
PSRR Power-supply rejection ratio(1) TA = –40°C to +125°C ±0.03 ±0.5 µV/V
INPUT BIAS CURRENT
IB Input bias current(1) ±50 ±350 pA
TA = –40°C to +125°C ±7 nA
IOS Input offset current(1) ±100 ±600 pA
TA = –40°C to +125°C ±3 nA
NOISE
En Input voltage noise f = 0.1Hz to 10Hz 0.180 µVPP
en Input voltage noise density f = 10Hz 7.6 nV/√Hz
f = 100Hz 7.6
f = 1kHz 7.5
in Input current noise density f = 1kHz 175 fA/√Hz
INPUT VOLTAGE
VCM Common-mode voltage (V–) – 0.1 (V+) – 1.7 V
CMRR Common-mode rejection ratio (V–) – 0.1V ≤ VCM ≤ (V+) – 1.7V VS = ±2.25V 118 135 dB
VS = ±18V 140 150
(V–) – 0.1V ≤ VCM ≤ (V+) – 1.7V,
TA = –40°C to +125°C(1)		 VS = ±2.25V  118 130
VS = ±18V 140 150
INPUT IMPEDANCE
zid Differential input impedance 100 || 1.6 MΩ || pF
zic Common-mode input impedance 1 || 1.9 TΩ || pF
OPEN-LOOP GAIN
AOL Open-loop voltage gain  VS = ±15V,
(V–) + 0.6V < VO < (V+) – 0.6V,
RLOAD = 10kΩ		 130 148 dB
TA = –40°C to +125°C(1) 130
VS = ±15V,
(V–) + 1.7V < VO < (V+) – 1.7V,
RLOAD = 2kΩ		 130 144
TA = –40°C to +125°C(1) 130
FREQUENCY RESPONSE
GBW Gain-bandwidth product 14 MHz
SR Slew rate Gain = 1, 10V step 40 V/µs
THD+N Total harmonic distortion + noise Gain = 1, f = 1kHz, VOUT = 4VRMS 0.00012%
Crosstalk f = 100kHz 110 dB
tS Settling time VS = ±18V, gain = 1,
10V step		 To 0.1% 1 µs
To 0.01% 15
tOR Overload recovery time VIN × gain = VS = ±18V 460 ns
OUTPUT
VO Voltage output swing from rail   Positive rail,
VS = 30V		 No load(1) 26 40 mV
RLOAD = 10kΩ 122 150
RLOAD = 2kΩ 500 575
Negative rail,
VS = 30V		 No load(1) 26 40
RLOAD = 10kΩ 120 135
RLOAD = 2kΩ 515 575
RLOAD = 10kΩ, TA = –40°C to +125°C, both rails(1) 250
ISC Short-circuit current ±42 mA
CLOAD Capacitive load drive See Typical Characteristics pF
ZO Open-loop output impedance f = 1MHz 220 Ω
POWER SUPPLY
IQ Quiescent current per amplifier VS = ±2.25V (VS = 4.5V), IO = 0A 1.5 1.8 mA
TA = –40°C to +125°C(1) 1.5 1.9
VS = ±18V (VS = 36V), IO = 0A 1.5 1.8
TA = –40°C to +125°C(1) 1.5 1.9
(1) Specification established from device population bench system measurements across multiple lots.