SBOSAI6 June   2024 THS6232

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics VS = 12V
    6. 5.6 Electrical Characteristics VS = 40V
    7. 5.7 Timing Requirements
    8. 5.8 Typical Characteristics VS = 12V
    9. 5.9 Typical Characteristics VS = 40V
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Common-Mode Buffer
      2. 6.3.2 Thermal Protection and Package Power Dissipation
      3. 6.3.3 Output Voltage and Current Drive
      4. 6.3.4 Breakdown Supply Voltage
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Broadband PLC Line Driving
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
        3. 7.2.1.3 Application Curve
    3. 7.3 Best Design Practices
    4. 7.4 Power Supply Recommendations
    5. 7.5 Layout
      1. 7.5.1 Layout Guidelines
      2. 7.5.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) THS6232 UNIT
RHF (VQFN)
24 PINS
RθJA Junction-to-ambient thermal resistance 51.1 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 45.5 °C/W
RθJB Junction-to-board thermal resistance 28.9 °C/W
ΨJT Junction-to-top characterization parameter 5.3 °C/W
ΨJB Junction-to-board characterization parameter 28.8 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 16.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.