SBOSAM3A July   2025  – August 2025 INA600

PRODMIX  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics - INA600A
    6. 6.6 Electrical Characteristics - INA600B
    7. 6.7 Electrical Characteristics - INA600F
    8. 6.8 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Gain Options and Resistors
        1. 7.3.1.1 Gain Error and Drift
      2. 7.3.2 Input Common-Mode Voltage Range
      3. 7.3.3 EMI Rejection
      4. 7.3.4 Typical Specifications and Distributions
      5. 7.3.5 Electrical Overstress
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Reference Pin
    2. 8.2 Typical Applications
      1. 8.2.1 48V Battery Monitoring Using Difference Amplifier
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 PSpice® for TI
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) INA600 UNIT
DCK (SC70) DBV (SOT-23)
6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance TBD 166.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance TBD 85.0 °C/W
RθJB Junction-to-board thermal resistance TBD 48.9 °C/W
ψJT Junction-to-top characterization parameter TBD 24.7 °C/W
ψJB Junction-to-board characterization parameter TBD 48.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance TBD n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.