SCASE72 January   2025 SN54SC8T164-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Balanced CMOS Push-Pull Outputs
      2. 6.3.2 SCxT Enhanced Input Voltage
        1. 6.3.2.1 Up Translation
        2. 6.3.2.2 Down Translation
      3. 6.3.3 Clamp Diode Structure
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Typical Application
      1. 7.1.1 Application Information
      2. 7.1.2 Design Requirements
        1. 7.1.2.1 Power Considerations
        2. 7.1.2.2 Input Considerations
        3. 7.1.2.3 Output Considerations
      3. 7.1.3 Detailed Design Procedure
      4. 7.1.4 Application Curves
    2. 7.2 Power Supply Recommendations
    3. 7.3 Layout
      1. 7.3.1 Layout Guidelines
      2. 7.3.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2) ±1000
(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250V CDM allows safe manufacturing with a standard ESD control process.