SCDS113F
December 2002 – September 2026
SN74CB3Q3306A
PRODUCTION DATA
1
1
Features
2
Description
3
Pin Configuration and Functions
4
Specifications
4.1
Absolute Maximum Ratings
4.2
Recommended Operating Conditions
4.3
ESD Ratings
4.4
Thermal Information
4.5
Electrical Characteristics
4.6
Switching Characteristics
5
Parameter Measurement Information
6
Detailed Description
6.1
Functional Block Diagram
6.2
Device Functional Modes
7
Device and Documentation Support
7.1
Documentation Support
7.2
Receiving Notification of Documentation Updates
7.3
Support Resources
7.4
Trademarks
7.5
Electrostatic Discharge Caution
7.6
Glossary
8
Revision History
9
Mechanical, Packaging, and Orderable Information
1
Features
High-Bandwidth Data Path (up to 500MHz)
5V Tolerant I/Os With Device Powered Up or Powered Down
Low and Flat ON-State Resistance (r
on
)
Characteristics Over Operating Range
(r
on
= 4Ω Typ)
Rail-to-Rail Switching on Data I/O Ports
0 to 5V Switching With 3.3V V
CC
0 to 3.3V Switching With 2.5V V
CC
Bidirectional Data Flow With Near-Zero Propagation Delay
Low Input and Output Capacitance Minimizes
Loading and Signal Distortion
(C
io(OFF)
= 3.5pF Typ)
Fast Switching Frequency (f
OE
= 20MHz Max)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (I
CC
= 0.25mA Typ)
V
CC
Operating Range From 2.3V to 3.6V
Data I/Os Support 0 to 5V Signaling Levels
(0.8V, 1.2V, 1.5V, 1.8V, 2.5V, 3.3V, 5V)
Control Inputs Can Be Driven by TTL or
5V/3.3V CMOS Outputs
I
off
Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 100mA
Per JESD 78, Class II
ESD Performance Tested Per JESD 22
2000V Human-Body Model
(A114-B, Class II)
1000V Charged-Device Model
(C101)
Supports Both Digital and Analog Applications: USB Interface, Differential Signal Interface, Bus Isolation, Low-Distortion Signal Gating