SN74CB3Q3306A

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Product details

Configuration 1:1 SPST Number of channels (#) 2 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, UART, I2C Ron (Typ) (Ohms) 4 CON (Typ) (pF) 8 Bandwidth (MHz) 500 Operating temperature range (C) -40 to 85 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (Max) (mA) 64 Rating Catalog Supply current (Typ) (uA) 700
Configuration 1:1 SPST Number of channels (#) 2 Power supply voltage - single (V) 2.5, 3.3 Protocols Analog, UART, I2C Ron (Typ) (Ohms) 4 CON (Typ) (pF) 8 Bandwidth (MHz) 500 Operating temperature range (C) -40 to 85 Features Powered-off protection, Supports input voltage beyond supply Input/output continuous current (Max) (mA) 64 Rating Catalog Supply current (Typ) (uA) 700
TSSOP (PW) 8 19 mm² 3 x 6.4 VSSOP (DCU) 8 6 mm² 2 x 3.1
  • High-Bandwidth Data Path (up to 500 MHz(1))
  • 5-V-Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over
    Operating Range (ron = 4 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
    • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion
    (Cio(OFF) = 3.5 pF Typ)
  • Fast Switching Frequency (f OE = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.25 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Differential Signal
    Interface, Bus Isolation, Low-Distortion Signal Gating

(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

  • High-Bandwidth Data Path (up to 500 MHz(1))
  • 5-V-Tolerant I/Os With Device Powered Up or Powered Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over
    Operating Range (ron = 4 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
    • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion
    (Cio(OFF) = 3.5 pF Typ)
  • Fast Switching Frequency (f OE = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.25 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0- to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: USB Interface, Differential Signal
    Interface, Bus Isolation, Low-Distortion Signal Gating

(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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Technical documentation

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Type Title Date
* Data sheet SN74CB3Q3306A datasheet (Rev. E) 25 Jan 2011
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 Jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 Dec 2021
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 19 Nov 2021
Application note Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 Jan 2021
Selection guide Logic Guide (Rev. AB) 12 Jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 Dec 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 Jan 2007
More literature Digital Bus Switch Selection Guide (Rev. A) 10 Nov 2004
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004
User guide Signal Switch Data Book (Rev. A) 14 Nov 2003
More literature Logic Cross-Reference (Rev. A) 07 Oct 2003
Application note Bus FET Switch Solutions for Live Insertion Applications 07 Feb 2003

Design & development

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Simulation model

HSPICE Model for SN74CB3Q3306A HSPICE Model for SN74CB3Q3306A

Simulation model

SN74CB3Q3306A IBIS Model SN74CB3Q3306A IBIS Model

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