SCES888C May   2018  – May 2024 2N7001T

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Operating Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Load Circuit and Voltage Waveforms
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Up-Translation or Down-Translation from 1.65 V to 3.60 V
      2. 7.3.2 Balanced CMOS Push-Pull Outputs
      3. 7.3.3 Standard CMOS Inputs
      4. 7.3.4 Negative Clamping Diodes
      5. 7.3.5 Partial Power Down (Ioff)
      6. 7.3.6 Over-voltage Tolerant Inputs
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Processor Error Up Translation
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Discrete FET Translation Replacement
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

Over recommended operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSVCCAVCCBMINTYP(1)MAXUNIT
VOHHigh-level output voltageVI = VIHIOH = –100 µA1.65 V - 3.6 V1.65 V - 3.6 VVCCB - 0.1V
IOH = –8 mA1.65 V1.65 V1.2
IOH = –9 mA2.3 V2.3 V1.75
IOH = –12 mA3 V3 V2.3
VOLLow-level output voltageVI = VILIOL = 100 µA1.65 V - 3.6 V1.65 V - 3.6 V0.1V
IOL = 8 mA1.65 V1.65 V0.45
IOL = 9 mA2.3 V2.3 V0.55
IOL = 12 mA3 V3 V0.7
IoffPartial power
down current		VI or VO = 0 V - 3.6 V0 V0 V - 3.6 V–88µA
VI or VO = 0 V - 3.6 V0 V - 3.6 V0 V–88
ICCAVCCA supply currentVI = VCCA or GND, IO = 0 mA1.65 V - 3.6 V1.65 V - 3.6 V8µA
0 V3.6 V–8
3.6 V0 V8
ICCBVCCB supply currentVI = VCCI or GND, IO = 0 mA1.65 V - 3.6 V1.65 V - 3.6 V8µA
0 V3.6 V8
3.6 V0 V–8
ICCA + ICCBCombined supply currentVI = VCCI or GND, IO = 0 mA1.65 V - 3.6 V1.65 V - 3.6 V14µA
CIInput capacitanceVI = 1.65 V DC + 1MHz -16 dBm sine wave3.3 V0 V2pF
COOutput capacitanceVI = 1.65 V DC + 1MHz -16 dBm sine wave0 V3.3 V4pF
(1) All typical values are for TA = 25°C