SCES888C May   2018  – May 2024 2N7001T

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Operating Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Load Circuit and Voltage Waveforms
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Up-Translation or Down-Translation from 1.65 V to 3.60 V
      2. 7.3.2 Balanced CMOS Push-Pull Outputs
      3. 7.3.3 Standard CMOS Inputs
      4. 7.3.4 Negative Clamping Diodes
      5. 7.3.5 Partial Power Down (Ioff)
      6. 7.3.6 Over-voltage Tolerant Inputs
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Processor Error Up Translation
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Discrete FET Translation Replacement
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MINMAXUNIT
VCCASupply voltage, A Port–0.54.2V
VCCBSupply voltage, B Port–0.54.2V
VIInput voltage(2)–0.54.2V
VOVoltage applied to the output in the high-impedance or power-off state(2)–0.54.2V
VOVoltage applied to the output in the high or low state(2)(3)–0.5VCCB + 0.2V
IIKInput clamp currentVI < 0–50mA
IOKOutput clamp currentVO < 0–50mA
IOContinuous output current–5050mA
IOContinuous current through VCCB or GND–5050mA
IOContinuous current through VCCA–1010mA
TJOperating junction temperature–40150°C
TstgStorage temperature–65150°C
(1) Stresses beyond those listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Section 5.3 is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The input negative-voltage and output voltage ratings may be exceeded if the input and output current ratings are observed.
(3) The output positive-voltage rating may be exceeded up to 4.2 V maximum if the output current ratings are observed.