SCES994 June   2025 TXGS441-SEP

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics, VCCA = 1.8 ± 0.15V
    7. 5.7  Switching Characteristics, VCCA = 2.5 ± 0.2V
    8. 5.8  Switching Characteristics, VCCA = 3.3 ± 0.3V
    9. 5.9  Switching Characteristics, VCCA = 5.0 ± 0.5V
    10. 5.10 Switching Characteristics: Tsk, TMAX
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Load Circuit and Voltage Waveforms
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 CMOS Schmitt-Trigger Inputs with Integrated Pulldowns
        1. 7.3.1.1 Inputs with Integrated Static Pull-Down Resistors
      2. 7.3.2 Balanced High-Drive CMOS Push-Pull Outputs
      3. 7.3.3 VCC Disconnect
      4. 7.3.4 Over-Voltage Tolerant Inputs
      5. 7.3.5 Glitch-Free Power Supply Sequencing
      6. 7.3.6 Negative Clamping Diodes
      7. 7.3.7 Fully Configurable Dual-Rail Design
      8. 7.3.8 Supports High-Speed Translation
      9. 7.3.9 AC Noise Rejection
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

1 Features

  • VID: TBD

  • Radiation tolerant:

    • Single event latch-up (SEL) immune up to 43 MeV-cm2 /mg at 125°C

    • Total ionizing dose (TID) Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 20 krad(Si)

  • Supports DC ground shifts up to ±40V
  • AC Noise Rejection of 80VPP up to 5MHz
  • CMTI of 1kV/µs
  • Low Prop Delay (<5ns) and Ch-Ch Skew (0.35ns)
  • Greater than 250Mbps
  • Low power consumption (0.65mA per channel at 1Mbps, 1.8V)
  • Fully configurable dual-rail design allows each port to operate from 1.71V to 5.5V
  • Supports VCC disconnect feature (I/Os are forced into high-Z)
  • Schmitt-trigger inputs allows for slow and noisy signals
  • Inputs with integrated static pull-down resistors prevent channels from floating
  • Operating temperature from –55°C to +125°C
  • Latch-up performance exceeds 100mA per JESD 78, class II
  • ESD protection exceeds JESD 22
    • 4000V human-body model
    • 500V charged-device model
  • Small SOT-24 (DYY-14) package