SGLS303H May   2005  – July 2025 TPS732-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Switching Characteristics
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Internal Current Limit
      2. 6.3.2 Shutdown
      3. 6.3.3 Dropout Voltage
      4. 6.3.4 Transient Response
      5. 6.3.5 Reverse Current
      6. 6.3.6 Thermal Protection
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Input and Output Capacitor Requirements
        2. 7.2.2.2 Output Noise
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Power Dissipation
      2. 7.4.2 Layout Examples
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) TPS732-Q1 New silicon UNIT
DRB (VSON) DCQ (SOT-223) DBV (SOT-23)
8 PINS 6 PINS 5 PINS
RθJA Junction-to-ambient thermal resistance  49.4 76 185.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 76.6 46.6 82.9 °C/W
RθJB Junction-to-board thermal resistance 22.0 18.1 53.1 °C/W
ψJT Junction-to-top characterization parameter 3.8 8.6 21.1 °C/W
ψJB Junction-to-board characterization parameter  22.0 17.6 52.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.8 N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.