SLLSEH3D July   2013  – September 2025 SN65HVD888

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings: JEDEC Specifications
    3. 5.3 ESD Ratings: IEC Specifications
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Power Dissipation Characteristics
    8. 5.8 Switching Characteristics
    9. 5.9 Typical Characteristics
  7. 6 Parameter Measurement information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Low-Power Standby Mode
      2. 7.3.2 Bus Polarity Correction
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Device Configuration
      2. 8.1.2 Bus Design
      3. 8.1.3 Cable Length Versus Data Rate
      4. 8.1.4 Stub Length
      5. 8.1.5 3 to 5V Interface
      6. 8.1.6 Noise Immunity
      7. 8.1.7 Transient Protection
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Design and Layout Considerations For Transient Protection
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

5.5 Thermal Information

THERMAL METRIC(1)SN65HVD888UNIT
D (SOIC)
8 PINS
RθJAJunction-to-ambient thermal resistance116.1°C/W
RθJC(top)Junction-to-case (top) thermal resistance60.8°C/W
RθJBJunction-to-board thermal resistance57.1°C/W
ψJTJunction-to-top characterization parameter13.9°C/W
ψJBJunction-to-board characterization parameter56.5°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.