SLLSFU6E April   2024  – September 2025 ISOM8110-Q1 , ISOM8111-Q1 , ISOM8112-Q1 , ISOM8113-Q1 , ISOM8115-Q1 , ISOM8116-Q1 , ISOM8117-Q1 , ISOM8118-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions 
    4. 6.4  Thermal Information 
    5. 6.5  Insulation Specifications
    6. 6.6  Safety-Related Certifications
    7. 6.7  Safety Limiting Values
    8. 6.8  Electrical Characteristics
    9. 6.9  Switching Characteristics
    10. 6.10 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Typical Application
        1. 9.1.1.1 Design Requirements
        2. 9.1.1.2 Detailed Design Procedure
          1. 9.1.1.2.1 Sizing RPULLUP
          2. 9.1.1.2.2 Sizing RIN
        3. 9.1.1.3 Application Curves
          1. 9.1.1.3.1 Insulation Lifetime
    2. 9.2 Power Supply Recommendations
    3. 9.3 Layout
      1. 9.3.1 Layout Guidelines
      2. 9.3.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

6.9 Switching Characteristics

All specifications are at TA = 25℃ unless otherwise noted
PARAMETER TEST CONDITIONS GPN MIN TYP MAX UNIT
AC
tr Rise time, see Figure 7-2 and Figure 7-3 VCC = 10V, IC = 2mA, RL= 100Ω, CL = 50pF ISOM8110-Q1 3.2 μs
ISOM8113-Q1 2.5 μs
tf Fall time, see Figure 7-2 and Figure 7-3 ISOM8110-Q1 4.0 μs
ISOM8113-Q1 7.5 μs
TON Turn on time, see  Figure 7-2 and Figure 7-3 ISOM8110-Q1, ISOM8115-Q1 5.7 μs
ISOM8111-Q1, ISOM8116-Q1 4.5 μs
ISOM8112-Q1, ISOM8117-Q1 6.2 μs
ISOM8113-Q1, ISOM8118-Q1 16.7 μs
TOFF Turn off time, see  Figure 7-2 and Figure 7-3 ISOM8110-Q1, ISOM8115-Q1 3.6 μs
ISOM8111-Q1, ISOM8116-Q1 3.7 μs
ISOM8112-Q1, ISOM8117-Q1 3.1 μs
ISOM8113-Q1, ISOM8118-Q1 2.7 μs
TON Turn on time, see  Figure 7-2 and Figure 7-3 VCC=5V, RL=4.7kΩ, IF=1.6mA, CL=50pF ISOM8110-Q1, ISOM8115-Q1 3.5 μs
ISOM8111-Q1, ISOM8116-Q1 2.7 μs
ISOM8112-Q1, ISOM8117-Q1 2.1 μs
ISOM8113-Q1, ISOM8118-Q1 1.8 μs
TOFF Turn off time, see  Figure 7-2 and Figure 7-3 ISOM8110-Q1, ISOM8115-Q1 8 μs
ISOM8111-Q1, ISOM8116-Q1 9 μs
ISOM8112-Q1, ISOM8117-Q1 11.5 μs
ISOM8113-Q1, ISOM8118-Q1 13.5 μs
TON Turn on time, see  Figure 7-2 and Figure 7-3 VCC=5V, RL=1.9kΩ, IF=16mA, CL=50pF ISOM8110-Q1, ISOM8115-Q1 0.62 μs
ISOM8111-Q1, ISOM8116-Q1 0.56 μs
ISOM8112-Q1, ISOM8117-Q1 0.48 μs
ISOM8113-Q1, ISOM8118-Q1 0.44 μs
TOFF Turn off time, see  Figure 7-2 and Figure 7-3 ISOM8110-Q1, ISOM8115-Q1 10 μs
ISOM8111-Q1, ISOM8116-Q1 11 μs
ISOM8112-Q1, ISOM8117-Q1 12.3 μs
ISOM8113-Q1, ISOM8118-Q1 14.5 μs
ts Storage time; time required for the output waveform to change from 0% (100%) to 10% (90%) when input is turned on and back off, see Figure 7-3 VCC = 5V, IF = 1.6mA, RL = 4.7kΩ ISOM811x-Q1 21 μs
BW Bandwidth, see Figure 7-4 and Figure 7-5 VIN_DC = 5V, VIN_AC = 1Vpk, RIN = 2kΩ  VCC= 5V,  RLOAD = 100Ω, CL = 50pF, measured at VCE –3dB sinewave ISOM811x-Q1 680 kHz