SLOK022 December 2024 TLV4H290-SEP
The parametric data for the TLV4H290-SEP show the device passes up to 30krad(Si) under HDR conditions, under biased and unbiased conditions. No functional failures were observed on any samples. The device exhibited parametric drift of the IB, and output leakage specifications under HDR conditions; of these, both recovered to levels within the data sheet limits after annealing, and IB remained within the specified post-TID exposure limits.
The data suggest that circuit designers seeking to use the TLV4H290-SEP must consider the possible effects of parametric drift of the IB and output high leakage specifications when assessing circuits for fault-planning purposes.