SLOK022 December   2024 TLV4H290-SEP

 

  1.   1
  2. 1TLV4H290-SEP Radiation Tolerant High-Speed Comparator TID Report
  3. 2Trademarks
  4. 3Device Information
    1. 3.1 Device Details
  5. 4Total Dose Test Setup
    1. 4.1 Test Overview
    2. 4.2 Test Description and Facilities
    3. 4.3 Test Setup Details
      1. 4.3.1 Unbiased
      2. 4.3.2 Biased
    4. 4.4 Test Configuration and Condition
  6. 5Tested Parameters
  7. 6Total Ionizing Dose RHA Characterization Summary Results
    1. 6.1 HDR Characterization Results
      1. 6.1.1 Input Bias Current
      2. 6.1.2 Output High Leakage
    2. 6.2 Summary of Results
  8.   A Appendix A: Total Ionizing Dose HDR Report
  9.   B Appendix B: Total Ionizing Dose HDR Report - Post-Anneal

Tested Parameters

Table 5-1 provides the list of tested parameters, typical at TA = 25°C (unless otherwise noted).

Table 5-1 TLV4H290-SEP Data Sheet Parameters
PARAMETER TEST CONDITION Data sheet Lit# SNOSDF0 Test#
MIN TYP MAX UNIT
Total Quiescent current (IQ) VS = 5V, VCM = 0V 100 140 μA

600000

Total Quiescent current (IQ) VS = 1.8V, VCM = 0V 100 140 μA

700000

Output low voltage from VEE (VOL), Ch1 VS = 5V, ISINK = 4mA 75 125 mV

2000001

Output low voltage from VEE (VOL), Ch2 VS= 5V, ISINK = 4mA 75 125 mV

2000000

Output low voltage from VEE(VOL), Ch3 VS= 5V, ISINK = 4mA 75 125 mV

2000003

Output low voltage from VEE (VOL), Ch4 VS= 5V, ISINK = 4mA 75 125 mV

2000002

Output low short-circuit current sink (ISCSINK), Ch1 VS = 5V 90 100 mA

4300000

Output low short-circuit current sink (ISCSINK), Ch2 VS = 5V 90 100 mA

4200000

Output low short-circuit current sink (ISCSINK), Ch3 VS = 5V 90 100 mA

4200001

Output low short-circuit current sink (ISCSINK), Ch4 VS = 5V 90 100 mA

4300000

Output high Leakage current (ILKG), Ch1 VS = 5V, VPU to 5V 10 nA

4400001

Output high Leakage current (ILKG), Ch2 VS = 5V, VPU to 5V 10 nA

4400000

Output high Leakage current (ILKG), Ch3 VS = 5V, VPU to 5V 10 nA

4400003

Output high Leakage current (ILKG), Ch4 VS = 5V, VPU to 5V 10 nA

4400002

Input offset voltage (VOS), Ch1 VS = 1.8V, VCM = -0.2V -3 ±0.3 3 mV 7000000
Input offset voltage (VOS), Ch2 VS = 1.8V, VCM = -0.2V -3 ±0.3 3 mV 7000001
Input offset voltage (VOS), Ch3 VS = 1.8V, VCM = -0.2V -3 ±0.3 3 mV 7000002
Input offset voltage (VOS), Ch4 VS = 1.8V, VCM = -0.2V -3 ±0.3 3 mV 7000003
Input offset voltage (VOS), Ch1 VS = 1.8V, VCM = 0V -3 ±0.3 3 mV 8000000
Input offset voltage (VOS), Ch2 VS = 1.8V, VCM = 0V -3 ±0.3 3 mV 8000001
Input offset voltage (VOS), Ch3 VS = 1.8V, VCM = 0V -3 ±0.3 3 mV 8000002
Input offset voltage (VOS), Ch4 VS = 1.8V, VCM = 0V -3 ±0.3 3 mV 8000003
Input offset voltage (VOS), Ch1 VS = 5V, VCM = 0V -3 ±0.3 3 mV 11000000
Input offset voltage (VOS), Ch2 VS = 5V, VCM = 0V -3 ±0.3 3 mV 11000001
Input offset voltage (VOS), Ch3 VS = 5V, VCM = 0V -3 ±0.3 3 mV 11000002
Input offset voltage (VOS), Ch4 VS = 5V, VCM = 0V -3 ±0.3 3 mV 11000003
Input offset voltage (VOS), Ch1 VS = 5V, VCM = -0.2V -3 ±0.3 3 mV 12000000
Input offset voltage (VOS), Ch2 VS = 5V, VCM = -0.2V -3 ±0.3 3 mV 12000001
Input offset voltage (VOS), Ch3 VS = 5V, VCM = -0.2V -3 ±0.3 3 mV 12000002
Input offset voltage (VOS), Ch4 VS = 5V, VCM = -0.2V -3 ±0.3 3 mV 12000003
Input bias current (IB) IN-, Ch1 VS = 5V, VCM = 0V 5 pA 20200000
Input bias current (IB) IN-, Ch2 VS = 5V, VCM = 0V 5 pA 20200001
Input bias current (IB) IN-, Ch3 VS = 5V, VCM = 0V 5 pA 20200002
Input bias current (IB) IN-, Ch4 VS = 5V, VCM = 0V 5 pA 20200003
Input bias current (IB) IN+, Ch1 VS = 5V, VCM = 0V 5 pA 20200004
Input bias current (IB) IN+, Ch2 VS = 5V, VCM = 0V 5 pA 20200005
Input bias current (IB) IN+, Ch3 VS = 5V, VCM = 0V 5 pA 20200006
Input bias current (IB) IN+, Ch4 VS = 5V, VCM = 0V 5 pA 20200007