SLPS271H March   2010  – December 2024 CSD17510Q5A

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Electrical Characteristics
  6. 5Thermal Characteristics
  7. 6Typical MOSFET Characteristics
  8. 7Device and Documentation Support
    1. 7.1 Third-Party Products Disclaimer
    2. 7.2 Documentation Support
      1. 7.2.1 Related Documentation
    3. 7.3 Receiving Notification of Documentation Updates
    4. 7.4 Support Resources
    5. 7.5 Trademarks
    6. 7.6 Electrostatic Discharge Caution
    7. 7.7 Glossary
  9. 817
  10. 9Mechanical Data

3 Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

CSD17510Q5A Top View Top View
Product Summary
VDS Drain to Source Voltage 30 V
Qg Gate Charge Total (4.5V) 6.4 nC
Qgd Gate Charge Gate to Drain 1.9 nC
RDS(on) Drain to Source On Resistance VGS = 4.5V 5.4 mΩ
VGS = 10V 4.1 mΩ
VGS(th) Threshold Voltage 1.5 V

Ordering Information
Device Package Media Qty Ship
CSD17510Q5A SON 5mm × 6mm Plastic Package 13-Inch Reel 2500 Tape and Reel

Absolute Maximum Ratings
TA = 25°C unless otherwise stated VALUE UNIT
VDS Drain to Source Voltage 30 V
VGS Gate to Source Voltage ±20 V
ID Continuous Drain Current, TC = 25°C 55 A
Continuous Drain Current(1) 20 A
IDM Pulsed Drain Current, TA = 25°C(2) 129 A
PD Power Dissipation(1) 3 W
TJ, TSTG Operating Junction and Storage Temperature Range –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 54A, L = 0.1mH, RG = 25Ω		 146 mJ
(1) Typical RθJA = 41°C/W on 1-inch2 (6.45cm2), 2oz. (0.071mm thick) Cu pad on a 0.06-inch (1.52mm) thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2%
CSD17510Q5A Text 4 Spacing RDS(on) vs VGS RDS(on) vs VGS
CSD17510Q5A Text 4 Spacing GATE CHARGE GATE CHARGE