SLPS271H March   2010  – December 2024 CSD17510Q5A

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Electrical Characteristics
  6. 5Thermal Characteristics
  7. 6Typical MOSFET Characteristics
  8. 7Device and Documentation Support
    1. 7.1 Third-Party Products Disclaimer
    2. 7.2 Documentation Support
      1. 7.2.1 Related Documentation
    3. 7.3 Receiving Notification of Documentation Updates
    4. 7.4 Support Resources
    5. 7.5 Trademarks
    6. 7.6 Electrostatic Discharge Caution
    7. 7.7 Glossary
  9. 817
  10. 9Mechanical Data

4 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Static Characteristics
BVDSSDrain to Source VoltageVGS = 0V, IDS = 250μA30V
IDSSDrain to Source Leakage CurrentVGS = 0V, VDS = 24V1μA
IGSSGate to Source Leakage CurrentVDS = 0V, VGS = 20V100nA
VGS(th)Gate to Source Threshold VoltageVDS = VGS, IDS = 250μA11.52.1V
RDS(on)Drain to Source On ResistanceVGS = 4.5V, IDS = 20A5.47.3mΩ
VGS = 10V, IDS = 20A4.15.2mΩ
gfsTransconductanceVDS = 15V, IDS = 20A59S
Dynamic Characteristics
CissInput CapacitanceVGS = 0V, VDS = 15V,
ƒ = 1MHz		9601250pF
CossOutput Capacitance630820pF
CrssReverse Transfer Capacitance5166pF
RGSeries Gate Resistance0.851.7Ω
QgGate Charge Total (4.5V)VDS = 15V, IDS = 20A6.48.3nC
QgdGate Charge Gate to Drain1.9nC
QgsGate Charge Gate to Source2.7nC
Qg(th)Gate Charge at Vth1.5nC
QossOutput ChargeVDS = 13.5V, VGS = 0V16nC
td(on)Turn On Delay TimeVDS = 15V, VGS = 4.5V,
IDS = 20A,RG = 2Ω		7ns
trRise Time11ns
td(off)Turn Off Delay Time9ns
tfFall Time4.1ns
Diode Characteristics
VSDDiode Forward VoltageISD = 20A, VGS = 0V0.851V
QrrReverse Recovery ChargeVDD= 13.5V, IF = 20A, di/dt = 300A/μs25nC
trrReverse Recovery Time24ns