SLPS369C February   2012  – May 2025 CSD16342Q5A

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Characteristics
  6. 5Typical MOSFET Characteristics
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

3 Description

The NexFET™ power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

CSD16342Q5A Top View Top View
Product Summary
VDS Drain to Source Voltage 25 V
Qg Gate Charge Total (4.5V) 6.8 nC
Qgd Gate Charge Gate to Drain 1.2 nC
RDS(on) Drain to Source On Resistance VGS = 2.5V 6.1 mΩ
VGS = 4.5V 4.3 mΩ
VGS = 8V 3.8 mΩ
Vth Threshold Voltage 0.85 V
 Ordering Information
DevicePackageMediaQtyShip
CSD16342Q5ASON 5 × 6 Plastic Package13-inch reel2500Tape and Reel
Absolute Maximum Ratings
TA = 25°C unless otherwise statedVALUEUNIT
VDSDrain to Source Voltage25V
VGSGate to Source Voltage+10 / –8V
IDContinuous Drain Current, TC = 25°C100A
Continuous Drain Current(1)21A
IDMPulsed Drain Current, TA = 25°C(2)131A
PDPower Dissipation(1)3W
TJ, TSTGOperating Junction and Storage Temperature Range–55 to 150°C
EASAvalanche Energy, single pulse
ID = 40A, L = 0.1mH, RG = 25Ω		80mJ
(1) Typical RθJA = 40°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300μs, duty cycle ≤2%
CSD16342Q5A RDS(ON) vs VGS RDS(ON) vs VGS
CSD16342Q5A Gate Charge Gate Charge