SLPS369C February 2012 – May 2025 CSD16342Q5A
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| Static Characteristics | |||||||
| BVDSS | Drain to Source Voltage | VGS = 0V, IDS = 250μA | 25 | V | |||
| IDSS | Drain to Source Leakage Current | VGS = 0V, VDS = 20V | 1 | μA | |||
| IGSS | Gate to Source Leakage Current | VDS = 0V, VGS = +10/-8V | 100 | nA | |||
| VGS(th) | Gate to Source Threshold Voltage | VDS = VGS, IDS = 250μA | 0.6 | 0.85 | 1.1 | V | |
| RDS(on) | Drain to Source On Resistance | VGS = 2.5V, IDS = 20A | 6.1 | 7.8 | mΩ | ||
| VGS = 4.5V, IDS = 20A | 4.3 | 5.5 | mΩ | ||||
| VGS = 8V, IDS = 20A | 3.8 | 4.7 | mΩ | ||||
| gfs | Transconductance | VDS = 15V, IDS = 20A | 91 | S | |||
| Dynamic Characteristics | |||||||
| CISS | Input Capacitance | VGS = 0V, VDS = 12.5V, ƒ = 1MHz | 1050 | 1350 | pF | ||
| COSS | Output Capacitance | 730 | 950 | pF | |||
| CRSS | Reverse Transfer Capacitance | 53 | 69 | pF | |||
| Rg | Series Gate Resistance | 1.5 | 3 | Ω | |||
| Qg | Gate Charge Total (4.5V) | VDS = 12.5V, ID = 20A | 6.8 | 7.1 | nC | ||
| Qgd | Gate Charge Gate to Drain | 0.9 | nC | ||||
| Qgs | Gate Charge Gate to Source | 1.9 | nC | ||||
| Qg(th) | Gate Charge at Vth | 1.2 | nC | ||||
| QOSS | Output Charge | VDS = 13V, VGS = 0V | 13.7 | nC | |||
| td(on) | Turn On Delay Time | VDS =
12.5V, VGS = 4.5V, ID = 20A , RG = 2Ω | 5.2 | ns | |||
| tr | Rise Time | 16.6 | ns | ||||
| td(off) | Turn Off Delay Time | 13.4 | ns | ||||
| tf | Fall Time | 3.1 | ns | ||||
| Diode Characteristics | |||||||
| VSD | Diode Forward Voltage | IS = 20A, VGS = 0V | 0.8 | 1 | V | ||
| Qrr | Reverse Recovery Charge | VDD = 13V, IF = 20A, di/dt = 300A/μs | 14.5 | nC | |||
| trr | Reverse Recovery Time | 20 | ns | ||||