SLPS553 Data sheet

SLPS553A October 2015 – June 2025 CSD19532KTT

PRODUCTION DATA

4.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0V, I_D = 250μA	100			V
I_DSS	Drain-to-source leakage current	V_GS = 0V, V_DS = 80V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0V, V_GS = 20V			100	nA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250μA	2.2	2.6	3.2	V
R_DS(on)	Drain-to-source on resistance	V_GS = 6V, I_D = 90A		5.3	6.6	mΩ
R_DS(on)	Drain-to-source on resistance	V_GS = 10V, I_D = 90A		4.6	5.6	mΩ
g_fs	Transconductance	V_DS = 10V, I_D = 90A		113		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0V, V_DS = 50V, ƒ = 1MHz		3890	5060	pF
C_oss	Output capacitance			674	876	pF
C_rss	Reverse transfer capacitance			14	18	pF
R_G	Series gate resistance			1.3	2.6	Ω
Q_g	Gate charge total (10 V)	V_DS = 50V, I_D = 90A		44	57	nC
Q_gd	Gate charge gate to drain			5.6		nC
Q_gs	Gate charge gate to source			17		nC
Q_g(th)	Gate charge at V_th			9.6		nC
Q_oss	Output charge	V_DS = 50V, V_GS = 0V		124		nC
t_d(on)	Turn on delay time	V_DS = 50V, V_GS = 10V, I_DS = 90A, R_G = 0Ω		9		ns
t_r	Rise time			3		ns
t_d(off)	Turn off delay time			14		ns
t_f	Fall time			2		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 90A, V_GS = 0V		0.9	1.0	V
Q_rr	Reverse recovery charge	V_DS= 50V, I_F = 90A, di/dt = 300A/μs		326		nC
t_rr	Reverse recovery time	V_DS= 50V, I_F = 90A, di/dt = 300A/μs		74		ns