SLPS553A October   2015  – June 2025 CSD19532KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Third-Party Products Disclaimer
    2. 5.2 Documentation Support
      1. 5.2.1 Related Documentation
    3. 5.3 Receiving Notification of Documentation Updates
    4. 5.4 Support Resources
    5. 5.5 Trademarks
    6. 5.6 Electrostatic Discharge Caution
    7. 5.7 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

3 Description

This 100V, 4.6mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19532KTT Pin Out Pin Out
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 100 V
Qg Gate Charge Total (10V) 44 nC
Qgd Gate Charge Gate to Drain 5.6 nC
RDS(on) Drain-to-Source On Resistance VGS = 6V 5.3 mΩ
VGS = 10V 4.6 mΩ
VGS(th) Threshold Voltage 2.6 V
Ordering Information(1)
DEVICE QTY MEDIA PACKAGE SHIP
CSD19532KTT 500 13-Inch Reel D2PAK Plastic Package Tape & Reel
CSD19532KTTT 50
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 100 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 200 A
Continuous Drain Current (Silicon limited), TC = 25°C 136
Continuous Drain Current (Silicon limited), TC = 100°C 98
IDM Pulsed Drain Current (1) 400 A
PD Power Dissipation 250 W
TJ, Tstg Operating Junction and
Storage Temperature Range		 –55 to 175 °C
EAS Avalanche Energy, single pulse
ID = 72A, L = 0.1mH, RG = 25Ω		 259 mJ
(1) Max RθJC = 0.6°C/W, Pulse duration ≤ 100µs,
Duty cycle ≤ 1%

CSD19532KTT RDS(on) vs VGS RDS(on) vs VGS
CSD19532KTT Gate Charge Gate Charge