SLUSFB8B September   2023  – May 2025 LMG3626

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 GaN Power FET Switching Parameters
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 GaN Power FET Switching Capability
      2. 7.3.2 Turn-On Slew-Rate Control
      3. 7.3.3 Current-Sense Emulation
      4. 7.3.4 Input Control Pins (EN, IN)
      5. 7.3.5 AUX Supply Pin
        1. 7.3.5.1 AUX Power-On Reset
        2. 7.3.5.2 AUX Under-Voltage Lockout (UVLO)
      6. 7.3.6 Overcurrent Protection
      7. 7.3.7 Overtemperature Protection
      8. 7.3.8 Fault Reporting
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Turn-On Slew-Rate Design
        2. 8.2.2.2 Current-Sense Design
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Solder-Joint Stress Relief
        2. 8.4.1.2 Signal-Ground Connection
        3. 8.4.1.3 CS Pin Signal
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1.     PACKAGE OPTION ADDENDUM
    2. 11.1 Mechanical Data

10 Revision History

Changes from Revision A (November 2023) to Revision B (May 2025)

  • Updated voltage rating from 650V to 700V and drain-source on resistance from 270mΩ to 220mΩ Go
  • Updated text in the Applications sectionGo
  • Updated voltage rating with Footnote (2), and added Footnote (3) in Absolute Maximum Ratings sectionGo
  • Added max value of drain-source on resistance at 25℃ and Updated typical value of drain-source on resistance at both 25℃ and 125℃ in the GAN POWER FET sub-section of Electrical Characteristics sectionGo
  • Added min value of temperature fault – postive-going threshold temperature in the OVERTEMPERATURE PROTECTION sub-section of Electrical Characteristics sectionGo
  • Added Output Capacitance vs Drain-Source Voltage graph and Output Capacitance Stored Energy vs Drain-Source Voltage graphs in Typical Characteristics sectionGo
  • Updated figure and added sentence clarifying application usage in GaN Power FET Switching Capability sectionGo
  • Updated figure in Layout Example the sectionGo

Changes from Revision * (September 2023) to Revision A (November 2023)

  • Changed the document status from Advance Information to Production DataGo