SLVS052J April   1988  – September 2026 TL594

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 5V Reference Regulator
      2. 7.3.2 Undervoltage Lockout
      3. 7.3.3 Oscillator
      4. 7.3.4 Dead-Time Control
      5. 7.3.5 Comparator
      6. 7.3.6 Pulse-Width Modulation (PWM)
      7. 7.3.7 Error Amplifiers
      8. 7.3.8 Output-Control Input
      9. 7.3.9 Output Transistors
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Power Source
        2. 8.2.2.2 Control Circuits
          1. 8.2.2.2.1 Oscillator
          2. 8.2.2.2.2 Error Amplifier
          3. 8.2.2.2.3 Current-Limiting Amplifier
          4. 8.2.2.2.4 Soft Start
          5. 8.2.2.2.5 Setting the Dead Time
        3. 8.2.2.3 Inductor Calculations
        4. 8.2.2.4 Output Capacitance Calculations
        5. 8.2.2.5 Transistor Power-Switch Calculations
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Feedback Traces
        2. 8.4.1.2 Input or Output Capacitors
        3. 8.4.1.3 Compensation Components
        4. 8.4.1.4 Traces and Ground Planes
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

10 Revision History

Changes from Revision I (September 2016) to Revision J (September 2026)

  • Updated the numbering format for tables, figures, and cross-references throughout the documentGo
  • Updated output transistor description and symbols from BJT to MOSFET throughout the documentGo
  • Removed PDIP (16) packageGo
  • Updated values in the Thermal Information table for all packagesGo
  • Changed output regulation typical value from 14mV to 6mVGo
  • Changed open-loop voltage amplification typical value from 95dB to 80dBGo
  • Changed common-mode rejection ratio typical value from 80dB to 100dBGo
  • Changed input bias current (DEAD-TIME CTRL) typical value from -2μA to -0.006μAGo
  • Changed input threshold voltage (DEAD-TIME CTRL) typical value from 3V to 2.5VGo
  • Changed output C1, C2 off-state current typical value from 2μA to 4μA, and 4μA to 2μA for other test condition Go
  • Changed output C1E1, C2E2 saturation voltage in common source configuration typical value from 1.1V to 0.5VGo
  • Changed output C1E1, C2E2 saturation voltage in source follower configuration typical value from 1.5V to 1.65VGo
  • Changed input threshold voltage (FEEDBACK) typical value from 4V to 3.4VGo
  • Changed standby supply current for VCC = 15V typical value from 9mA to 1.62mAGo
  • Changed standby supply current for VCC = 40V typical value from 11mA to 1.68mA Go
  • Changed average supply current typical value from 12.4mA to 2.2mAGo
  • Changed rise time in common source configuration typical value from 100ns to 70nsGo
  • Changed fall time in common source configuration typical value from 30ns to 20nsGo
  • Changed rise time in source follower configuration typical value from 200ns to 85nsGo
  • Changed fall time in source follower configuration typical value from 45ns to 35nsGo
  • Updated Figure 5-1 and Amplifier Voltage Amplification vs Frequency Go
  • Updated description to align VREF behavior changes for input voltages less than 7VGo
  • Updated the formatting for inductor calculationsGo
  • Updated reference voltage vs input voltage application curve Go

Changes from Revision H (January 2014) to Revision I (September 2016)

  • Added Applications section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information sectionGo
  • Changed values in the Thermal Information table from 73 to 73.5 (D), from 67 to 43.5 (N), from 64 to 73.6 (NS), and from 108 to 101.5 (PW)Go