SLVSAW5D July 2011 – December 2024 DRV8803
PRODUCTION DATA
Power dissipation in the DRV8803 device is dominated by the power dissipated in the output FET resistance, or RDS(on). Average power dissipation of each FET when running a static load can be roughly estimated by Equation 3:

where
At start-up and fault conditions, this current is much higher than normal running current; consider these peak currents and their duration. When driving more than one load simultaneously, the power in all active output stages must be summed.
The maximum amount of power that can be dissipated in the device is dependent on ambient temperature and heatsinking.
Note that RDS(on) increases with temperature, so as the device heats, the power dissipation increases. This must be taken into consideration when sizing the heatsink.