SLVSH72B December   2023  – October 2026 TPS281C100

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Options
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Device Functional Modes
    4. 8.4 Working Mode
    5. 8.5 Feature Description
      1. 8.5.1 Accurate Current Sense
        1. 8.5.1.1 High Accuracy Sense Mode
      2. 8.5.2 Programmable Current Limit
        1. 8.5.2.1 Short-Circuit and Overload Protection
        2. 8.5.2.2 Capacitive Charging
      3. 8.5.3 Inductive-Load Switching-Off Clamp
      4. 8.5.4 Inductive Load Demagnetization
      5. 8.5.5 Full Protections and Diagnostics
        1. 8.5.5.1 Open-Load Detection
        2. 8.5.5.2 Thermal Protection Behavior
        3. 8.5.5.3 Undervoltage Lockout (UVLO) Protection
        4. 8.5.5.4 Reverse Polarity Protection
          1. 8.5.5.4.1 Method 1
          2. 8.5.5.4.2 Method 2 (GND Network Protection)
        5. 8.5.5.5 Protection for MCU I/Os
        6. 8.5.5.6 Diagnostic Enable Function
        7. 8.5.5.7 Loss of Ground
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 IEC 61000-4-4 EFT
        2. 9.2.1.2 IEC 61000-4-5 Surge
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting RILIM
        2. 9.2.2.2 Selecting RSNS
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 EMC Considerations
      2. 9.4.2 Layout Example
        1. 9.4.2.1 DNT Layout Without a GND Network
      3. 9.4.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.4.3 Thermal Considerations

This device has thermal shutdown (TABS) circuitry as a protection from overheating. For continuous normal operation, the junction temperature must not exceed the thermal-shutdown trip point. If the junction temperature exceeds the thermal-shutdown trip point, the output turns off. When the junction temperature falls below the thermal-shutdown trip point, the output turns on again.

Calculate the power dissipated by the device according to Equation 12.

Equation 12. PT=IOUT2×RDSON+VS×IQ,VS

where

  • PT = Total power dissipation of the device

After determining the power dissipated by the device, calculate the junction temperature from the ambient temperature and the device thermal impedance.

Equation 13. TJ=TA+RθJA×PT

For more information please see the How to Drive Resistive, Inductive, Capacitive, and Lighting Loads application note.