SLVSHK6 March   2025 TPS61381-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 I2C Timing Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 VCC Power Supply and UVLO Logic
      2. 6.3.2 Enable or Shutdown
      3. 6.3.3 Device Operating Modes and Control Logic
      4. 6.3.4 Configured as Status Indicatior
      5. 6.3.5 Thermal Shutdown
    4. 6.4 Charger Feature Description
      1. 6.4.1 Charger Enable
      2. 6.4.2 LDO Charger
      3. 6.4.3 NiMH Battery Charging Profile
      4. 6.4.4 Lithium Battery Charging Profile
      5. 6.4.5 Super Capacitor Charging Profile
      6. 6.4.6 Battery Cold, Hot Temperature (TS Pin)
      7. 6.4.7 Charger Protection and Fault Condition Indication
    5. 6.5 Boost Feature Description
      1. 6.5.1 Enable and Start up
        1. 6.5.1.1 Automatic Transition into Boost Mode
        2. 6.5.1.2 Manual Transition into Boost Mode
      2. 6.5.2 Down Mode
      3. 6.5.3 Output Short- to-Ground Protection
      4. 6.5.4 Boost Control Loop
      5. 6.5.5 Current Limit Operation
      6. 6.5.6 Functional Modes at Light Load
        1. 6.5.6.1 Auto PFM Mode
        2. 6.5.6.2 Forced PWM Mode
      7. 6.5.7 Duty Cycle Limitation
      8. 6.5.8 BUB Voltage Loop
      9. 6.5.9 Spread Spectrum
    6. 6.6 Battery State-of-Health (SOH) Detection Feature Description
      1. 6.6.1 SOH Mode Operation
      2. 6.6.2 Multi-Signal Output in AVI Pin
      3. 6.6.3 Calculate Impedance of BUB
    7. 6.7 I2C Serial Interface
      1. 6.7.1 Data Validity
      2. 6.7.2 START and STOP Conditions
      3. 6.7.3 Byte Format
      4. 6.7.4 Acknowledge (ACK) and Not Acknowledge (NACK)
      5. 6.7.5 Slave Address and Data Direction Bit
      6. 6.7.6 Single Read and Write
      7. 6.7.7 Multi-Read and Multi-Write
  8. 7 Register Maps
    1. 7.1  Register 00H: CHIP_ID
    2. 7.2  Register 01H: BOOST_SET1
    3. 7.3  Register 02H: BOOST_SET2
    4. 7.4  Register 03H: BOOST_SET3
    5. 7.5  Register 04H: CHGR_SET1
    6. 7.6  Register 05H: CHGR_SET2
    7. 7.7  Register 06H: CHGR_SET3
    8. 7.8  Register 07H: CHGR_SET4
    9. 7.9  Register 08H: CHGR_STATUS
    10. 7.10 Register 09H: SOH_SET1
    11. 7.11 Register 0AH: SOH_SET2
    12. 7.12 Register 0BH: CONTROL_STATUS
    13. 7.13 Register 0CH: FAULT_CONDITION
    14. 7.14 Register 0DH: STATUS_PIN_SET
    15. 7.15 Register 0EH: SW_RST
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Selecting the External MOSFET
        2. 8.2.2.2 Inductor Selection
        3. 8.2.2.3 Capacitor in Back-Up Battery Side
        4. 8.2.2.4 Selecting the Output Capacitor
        5. 8.2.2.5 Loop Stability and Compensation Design
          1. 8.2.2.5.1 Small Signal Analysis
          2. 8.2.2.5.2 Loop Compensation Design
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

8.2.2.1 Selecting the External MOSFET

TPS61381-Q1 requires an external MOSFET (Q1) as its boost low side switch and SOH discharge switch. The external MOSFET is selected depending on its thermal performance, VDS voltage and Id current.

  • TPS61381-Q1 supports only n-channel MOSFET as Q1.
  • Recommend Qgd< 5nC. Qgd should not exceed 10nC at most.
  • Vplateau<4V.
  • Rdson low as possible. Recommend Rdson less than 15mohm at most
  • The drain-source breakdown voltage, V(BR)DSS >= 30V
  • The continuous drain current should be larger than the maximum peak current in the boost mode:
    Equation 7. I p e a k = I O U T ( 1 - D ) ⋅ e f f + V B U B ⋅ D 2 L ⋅ f s w

where

  • IOUT is the maximum load current in boost mode.
  • D is the duty cycle of boost operation
  • eff is the boost mode efficiency
  • L is the boost inductance
  • fsw is the switching frequency in boost mode
  • VBUB is the input voltage on BUB pin