SLVSI27 December   2025 TPS1HC08-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage Thresholds
      2. 8.3.2  Accurate Current Sense
        1. 8.3.2.1 SNS Response Time
        2. 8.3.2.2 SNS Output Filter
        3. 8.3.2.3 Multiplexing of Current Sense Across Devices
      3. 8.3.3  Overcurrent Protection
        1. 8.3.3.1 Adjustable Current Limit
          1. 8.3.3.1.1 Current Limiting With Thermal Regulation
          2. 8.3.3.1.2 Current Limiting With No Thermal Regulation
          3. 8.3.3.1.3 Current Limit Foldback
          4. 8.3.3.1.4 Current Limit Accuracy
        2. 8.3.3.2 Thermal Shutdown
          1. 8.3.3.2.1 Relative Thermal Shutdown
          2. 8.3.3.2.2 Absolute Thermal Shutdown
      4. 8.3.4  Retry Protection Mechanism From Thermal Shutdown
      5. 8.3.5  Inductive-Load Switching-Off Clamp
      6. 8.3.6  Slower Slew Rate Option
      7. 8.3.7  Capacitive Load Charging
        1. 8.3.7.1 Adjustable Current Limiting for Inrush Control
        2. 8.3.7.2 Current Limit with Thermal Regulation for Capacitive Loads
        3. 8.3.7.3 Retry Thermal Shutdown Behavior for Capacitive Loads
        4. 8.3.7.4 Impact of DC Load on Capacitive Charging Capability
        5. 8.3.7.5 Device Capability
      8. 8.3.8  Bulb Charging
        1. 8.3.8.1 Non-Thermal Regulated Mode for Bulb Loads
        2. 8.3.8.2 Thermal Management During Bulb Inrush
        3. 8.3.8.3 Device Capability
      9. 8.3.9  Fault Detection and Reporting
        1. 8.3.9.1 Diagnostic Enable Function
        2. 8.3.9.2 FLT Reporting
        3. 8.3.9.3 FLT Timings
        4. 8.3.9.4 Fault Table
      10. 8.3.10 Full Diagnostics
        1. 8.3.10.1 Open-Load Detection
          1. 8.3.10.1.1 Channel On
          2. 8.3.10.1.2 Channel Off
        2. 8.3.10.2 Short-to-Battery Detection
        3. 8.3.10.3 Reverse-Polarity and Battery Protection
      11. 8.3.11 Full Protections
        1. 8.3.11.1 UVLO Protection
        2. 8.3.11.2 Loss of GND Protection
        3. 8.3.11.3 Loss of Power Supply Protection
        4. 8.3.11.4 Reverse Current Protection
        5. 8.3.11.5 Protection for MCU I/Os
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 EMC Transient Disturbances Test
      3. 9.2.3 Transient Thermal Performance
      4. 9.2.4 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Examples
        1. 9.4.2.1 Without a GND Network
        2. 9.4.2.2 With a GND Network
      3. 9.4.3 Wettable Flank Package
  11. 10Revision History
  12. 11Device and Documentation Support
    1. 11.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Mechanical, Packaging, and Orderable Information

9.2.3 Transient Thermal Performance

The TPS1HC08-Q1 device can experience different transient conditions that cause large currents to flow for a short duration of time. These may include:

  • Inrush current during high capacitive or bulb load charging.
  • Fault conditions such as output shorted to ground, triggering overcurrent protection.
  • Briefly energizing a inductive load such as motor or solenoid for a limited time, then de-energizing.

In these transient cases, the thermal impedance parameter ZϴJA denotes the junction-to-ambient thermal performance. The below figure shows the simulated thermal impedance for EVM under natural convection conditions using an FR4 2s2p board. The device (chip + package) was modeled on a 76.2 × 114.3 × 1.5mm board featuring two inner copper layers (two at 70μm Cu thickness and two at 35μm Cu thickness). Five thermal vias positioned beneath the exposed pad established contact with the first inner copper layer (12mm x 12mm). All simulations were performed at an ambient temperature of 25°C with power dissipation set at 1 W for the channel.

TPS1HC08-Q1 ZϴJA (transient thermal impedance) with EVM 2s2p PCB Layout, 5 Thermal Vias Below Exposed Pad Figure 9-2 ZϴJA (transient thermal impedance) with EVM 2s2p PCB Layout, 5 Thermal Vias Below Exposed Pad