SLVSI81 June   2025 MMBZ15VAL-Q1

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings - AEC Specification
    3. 5.3 ESD Ratings - IEC Specification
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics
    7. 5.7 Typical Characteristics
  7. 6Device and Documentation Support
    1. 6.1 Documentation Support
      1. 6.1.1 Related Documentation
    2. 6.2 Receiving Notification of Documentation Updates
    3. 6.3 Support Resources
    4. 6.4 Trademarks
    5. 6.5 Electrostatic Discharge Caution
    6. 6.6 Glossary
  8. 7Revision History
  9. 8Mechanical, Packaging, and Orderable Information

Electrical Characteristics

Part Number

VRWM

VBR (V) at IT

V Clamp

(1)(2)

VC (V) at IPP

Reverse Leakage Current

IR (nA) at VRWM

Temperature Coefficient

SZ (mV/C) at IT

Capacitance

CD (pF)

Volts

MINTYPMAXIT (mA)MAXIPP (A)MAX

TYP

IT (mA)MAX
MMBZ15VAL-Q1

12

14.3

15

15.8

120

1.7

50

11

1

105

MMBZ27VAL-Q1

22

25.65

27

28.35

1

39

0.9

50

23

1

73

Device stressed with 10/1000μs exponential decay waveform according to IEC 61643-321
Measured from pin 1 or pin 2 to pin 3