SLVSII6 January   2026 TVS5800

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings - JEDEC
    3. 6.3 ESD Ratings - IEC
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Protection Specifications
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

6.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse Stand-off Voltage -0.5 58 V
ILEAK Leakage Current Measured at VIN = VRWM TA  = 27°C 6 300 nA
Measured at VIN = VRWM TA  = 85°C 50 1200 nA
Measured at VIN = VRWM TA  = 105°C 140 2400 nA
VF Forward Voltage IIN  = 1mA from GND to IO 0.25 0.5 0.65 V
VBR Break-down Voltage IIN  = 1mA from IO to GND 65.8 69.8 V
VCLAMP Clamp Voltage 10A IEC 61000-4-5 Surge (8/20µs) from IO to GND, VIN = 0V before surge, 27°C 66.5 70.7 74.7 V
20A IEC 61000-4-5 Surge (8/20µs) from IO to GND, VIN = 0V before surge, 27°C 66.7 70.9 75 V
RDYN 8/20 µs surge dynamic resistance Calculated from VCLAMP at .5*Ipp and Ipp surge current levels, 27°C 40 mΩ
CIN Input pin capacitance VIN = VRWM, f = 1MHz, 30mVpp, IO to GND 150 pF