SLVSIM2A June   2025  – August 2025 TPD4S480-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings—JEDEC Specification
    3. 5.3 ESD Ratings—IEC Specification
    4. 5.4 ESD Ratings—ISO Specification
    5. 5.5 Recommended Operating Conditions
    6. 5.6 Thermal Information
    7. 5.7 Electrical Characteristics
    8. 5.8 Timing Requirements
    9. 5.9 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 4-Channels of Short-to-VBUS Overvoltage Protection (CC1, CC2, SBU1, SBU2 Pins or CC1, CC2, DP, DM Pins): 63VDC Tolerant
      2. 6.3.2 4-Channels of IEC 61000-4-2 ESD Protection (CC1, CC2, SBU1, SBU2 Pins)
      3. 6.3.3 CC1, CC2 Overvoltage Protection FETs 600-mA Capable for Passing VCONN Power
      4. 6.3.4 CC Dead Battery Resistors Integrated for Handling the Dead Battery Use Case in Mobile Devices
      5. 6.3.5 EPR Adapter
        1. 6.3.5.1 VBUS Divider
        2. 6.3.5.2 EPR Blocking FET Gate Driver
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
    3. 7.3 Design Requirements
      1. 7.3.1 EPR Design Requirements
    4. 7.4 Detailed Design Procedure
      1. 7.4.1 VBIAS Capacitor Selection
      2. 7.4.2 CC Line Capacitance
      3. 7.4.3 FLT Pin Operation
      4. 7.4.4 Dead Battery Operation
    5. 7.5 Application Curves
    6. 7.6 Power Supply Recommendations
    7. 7.7 Layout
      1. 7.7.1 Layout Guidelines
      2. 7.7.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

7.7.1 Layout Guidelines

Proper routing and placement is important to maintain the signal integrity the USB2.0, SBU, CC line signals. The following guidelines apply to the TPD4S480-Q1 device:

  • Place the bypass capacitors as close as possible to the VPWR pin, and ESD protection capacitor as close as possible to the VBIAS pin. Attach capacitors to a solid ground to minimize voltage disturbances during transient events such as short-to-VBUS and ESD strikes.
  • Route the USB2.0 and SBU lines as straight as possible and minimize any sharp bends.

Standard ESD recommendations apply to the C_CC1, C_CC2, C_SBU1, and C_SBU2 as well:

  • The optimum placement for the device is as close to the connector as possible:
    • EMI during an ESD event couples from the trace being struck to other nearby unprotected traces, resulting in early system failures.
    • The PCB designer minimizes the possibility of EMI coupling by keeping any unprotected traces away from the protected traces which are between the TPD4S480-Q1 device and the connector.
  • Route the protected traces as straight as possible.
  • Eliminate any sharp corners on the protected traces between the TVS and the connector by using rounded corners with the largest radii possible.
    • Electric fields tend to build up on corners, increasing EMI coupling.