SLYA090B September   2024  – August 2025 TMAG5133 , TMAG5134 , TMAG5233

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
    1. 1.1 Reed Switches
    2. 1.2 Hall-Effect Sensors
    3. 1.3 Tunneling Magneto Resistance (TMR) Sensors
  5. 2Design Considerations
    1. 2.1 Technology Complexity and Cost
    2. 2.2 Axis of Sensitivity
      1. 2.2.1 Hall-Effect Switches
      2. 2.2.2 TMR Switches
      3. 2.2.3 Reed Switches
    3. 2.3 Mechanical Constraints
    4. 2.4 Power Consumption
  6. 3Summary
  7. 4References
  8. 5Revision History

Technology Complexity and Cost

The complexity to create any switching technology has a direct impact on the size and cost of the sensor.

Hall-effect sensors can be miniaturized and are easily integrated in modern semiconductor processes. As a result these devices are typically manufactured and marketed at lower costs than either TMR or reed switches.

Reed switches are enclosed in a glass tube or some other hermetically sealed enclosure, and this process produces larger and costlier packaging requirements. These enclosures can be fragile which also increases handling and installation costs with an increased risk that these devices can need to be replaced in time due to physical damage.

The complex stack of materials involved with the creation of TMR sensors requires specialized deposition equipment not common to all semiconductor manufacturing flows and require an added step of magnetizing the pinned layer. The increased process steps and specialized materials make TMR inherently more expensive than Hall-effect sensors. Low-power Hall-effect sensors like TMAG5233, TMAG5133, or TMAG5134 can be more pragmatic choices.