SNAS680E December   2015  – August 2022 LMX2582

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Functional Description
      1. 7.3.1  Input Signal
      2. 7.3.2  Input Signal Path
      3. 7.3.3  PLL Phase Detector and Charge Pump
      4. 7.3.4  N Divider and Fractional Circuitry
      5. 7.3.5  Voltage Controlled Oscillator
      6. 7.3.6  VCO Calibration
      7. 7.3.7  Channel Divider
      8. 7.3.8  Output Distribution
      9. 7.3.9  Output Buffer
      10. 7.3.10 Phase Adjust
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power Down
      2. 7.4.2 Lock Detect
      3. 7.4.3 Register Readback
    5. 7.5 Programming
      1. 7.5.1 Recommended Initial Power on Programming Sequence
      2. 7.5.2 Recommended Sequence for Changing Frequencies
    6. 7.6 Register Maps
      1. 7.6.1 LMX2582 Register Map – Default Values
        1. 7.6.1.1 Register Descriptions
  8. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Optimization of Spurs
        1. 8.1.1.1 Understanding Spurs by Offsets
        2. 8.1.1.2 Spur Mitigation Techniques
      2. 8.1.2  Configuring the Input Signal Path
        1. 8.1.2.1 Input Signal Noise Scaling
      3. 8.1.3  Input Pin Configuration
      4. 8.1.4  Using the OSCin Doubler
      5. 8.1.5  Using the Input Signal Path Components
        1. 8.1.5.1 Moving Phase Detector Frequency
        2. 8.1.5.2 Multiplying and Dividing by the Same Value
      6. 8.1.6  Designing for Output Power
      7. 8.1.7  Current Consumption Management
      8. 8.1.8  Decreasing Lock Time
      9. 8.1.9  Modeling and Understanding PLL FOM and Flicker Noise
      10. 8.1.10 External Loop Filter
    2. 8.2 Typical Application
      1. 8.2.1 Design for Low Jitter
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

ESD Ratings

VALUEUNIT
V(ESD)Electrostatic dischargeHuman-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)±2500V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)±750
Machine model (MM) ESD stress voltage±250
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2500 V may actually have higher performance.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. Pins listed as ±1250 V may actually have higher performance.