SNOS879J August   1999  – December 2025 LM7301

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics: 2.7V to 32V DC
    6. 5.6  Electrical Characteristics: AC
    7. 5.7  Electrical Characteristics: 30-V DC
    8. 5.8  Typical Characteristics
    9. 5.9  Old Versus New Die Comparison
    10. 5.10 Slew rate
  7. 6 Power Supply Recommendations
  8. 7 Layout
    1. 7.1 Layout Guidelines
    2. 7.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Support Resources
    2. 8.2 Trademarks
    3. 8.3 Electrostatic Discharge Caution
    4. 8.4 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.9 Old Versus New Die Comparison

As of the publication of revision J of this data sheet, Texas Instruments has moved manufacturing of the die for LM7301 to a modern fabrication site. The two different die are referred to in this document as “old” (previous fabrication site) and “new” die. The die origin can be separated from the “Chip Source Origin” (CSO) parameter in the shipping information. The old die CSO is “GF6”, for the new die CSO is “RFB”. The old die information is maintained in this data sheet for comparison purposes, but all new manufacturing has moved to the new die.

Description Old Die New Die
Minimum supply voltage 2.2V 2.7V
Input bias current (typ) 90nA 10pA
Current between inputs (Differential input voltage between input and inverting input = 2V) 230µA (two diodes and 2.5kΩ resistance between inputs) < 100pA
Output voltage slew architecture Standard slew architecture Slew-boosted architecture, can impact signal distortion above 100kHz, 0.8Vp