SNOSDE0A February   2022  – May 2022 LM74502-Q1 , LM74502H-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Input Voltage (VS)
      2. 9.3.2 Charge Pump (VCAP)
      3. 9.3.3 Gate Driver (GATE an SRC)
        1. 9.3.3.1 Inrush Current Control
      4. 9.3.4 Enable and Undervoltage Lockout (EN/UVLO)
      5. 9.3.5 Overvoltage Protection (OV)
    4. 9.4 Device Functional Modes
      1. 9.4.1 Shutdown Mode
      2. 9.4.2 Conduction Mode
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Design Considerations
        2. 10.2.2.2 MOSFET Selection
        3. 10.2.2.3 Overvoltage Protection
        4. 10.2.2.4 Charge Pump VCAP, Input and Output Capacitance
      3. 10.2.3 Selection of TVS Diodes for 12-V Battery Protection Applications
      4. 10.2.4 Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
      5. 10.2.5 Application Curves
    3. 10.3 Surge Stopper Using LM74502-Q1, LM74502H-Q1
      1. 10.3.1 VS Capacitance, Resistor R1 and Zener Clamp (DZ)
      2. 10.3.2 Overvoltage Protection
      3. 10.3.3 MOSFET Selection
    4. 10.4 Fast Turn-On and Turn-Off High Side Switch Driver Using LM74502H-Q1
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Receiving Notification of Documentation Updates
    2. 13.2 Support Resources
    3. 13.3 Trademarks
    4. 13.4 Electrostatic Discharge Caution
    5. 13.5 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

10.2.2.3 Overvoltage Protection

Resistors R1 and R2 connected in series is used to program the overvoltage threshold. Connecting R1 to VIN provides overvoltage cutoff and switching the connection to VOUT provides overvoltage clamp response. The resistor values required for setting the overvoltage threshold VOV to 37 V are calculated by solving Equation 3

Equation 3.

For minimizing the input current drawn from the supply through resistors R1 and R2, TI recommends to use higher value of resistance. Using high value resistors adds error in the calculations because the current through the resistors at higher value becomes comparable to the leakage current into the OV pin. Select (R1 + R2) such that current through resistors is around 100 times higher than the leakage through OV pin. Based on the device electrical characteristics, VOVR is 1.25 V, select (R1) = 100 kΩ and R2 = 3.5 kΩ as a standard resistor value to set overvoltage cutoff of 37 V.

Based on application use case, overvoltage threshold can be set at the lower voltage as it enables lower rated downstream components, thus providing solution size and lower cost benefit.