SNOSDE0A
February 2022 – May 2022
LM74502-Q1
,
LM74502H-Q1
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Device Comparison Table
6
Pin Configuration and Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Electrical Characteristics
7.6
Switching Characteristics
7.7
Typical Characteristics
8
Parameter Measurement Information
9
Detailed Description
9.1
Overview
9.2
Functional Block Diagram
9.3
Feature Description
9.3.1
Input Voltage (VS)
9.3.2
Charge Pump (VCAP)
9.3.3
Gate Driver (GATE an SRC)
9.3.3.1
Inrush Current Control
9.3.4
Enable and Undervoltage Lockout (EN/UVLO)
9.3.5
Overvoltage Protection (OV)
9.4
Device Functional Modes
9.4.1
Shutdown Mode
9.4.2
Conduction Mode
10
Application and Implementation
10.1
Application Information
10.2
Typical Application
10.2.1
Design Requirements
10.2.2
Detailed Design Procedure
10.2.2.1
Design Considerations
10.2.2.2
MOSFET Selection
10.2.2.3
Overvoltage Protection
10.2.2.4
Charge Pump VCAP, Input and Output Capacitance
10.2.3
Selection of TVS Diodes for 12-V Battery Protection Applications
10.2.4
Selection of TVS Diodes and MOSFET for 24-V Battery Protection Applications
10.2.5
Application Curves
10.3
Surge Stopper Using LM74502-Q1, LM74502H-Q1
10.3.1
VS Capacitance, Resistor R1 and Zener Clamp (DZ)
10.3.2
Overvoltage Protection
10.3.3
MOSFET Selection
10.4
Fast Turn-On and Turn-Off High Side Switch Driver Using LM74502H-Q1
11
Power Supply Recommendations
12
Layout
12.1
Layout Guidelines
12.2
Layout Example
13
Device and Documentation Support
13.1
Receiving Notification of Documentation Updates
13.2
Support Resources
13.3
Trademarks
13.4
Electrostatic Discharge Caution
13.5
Glossary
14
Mechanical, Packaging, and Orderable Information
1
Features
AEC-Q100 qualified with the following results
Device temperature grade 1:
–40°C to +125°C ambient operating temperature range
Device HBM ESD classification level 2
Device CDM ESD classification level C4B
3.2-V to 65-V input range (3.9-V start-up)
–65-V input reverse voltage rating
Integrated charge pump to drive
External back-to-back N-Channel MOSFETs
External high side switch MOSFET
External reverse polarity protection MOSFET
Gate drive variants
LM74502-Q1: 60-μA peak gate drive source capacity
LM74502H-Q1: 11-mA peak gate drive source capacity
2-A peak gate sink capacity
1-µA shutdown current (EN/UVLO = Low)
45-µA typical operating quiescent current (EN/UVLO = High)
Adjustable overvoltage and undervoltage protection
Meets automotive ISO7637 pulse 1 transient requirements with additional TVS diode
Available in 8-pin SOT-23 package 2.90 mm × 1.60 mm