TIDUF21A December   2022  – January 2023

 

  1.   Description
  2.   Resources
  3.   Features
  4.   Applications
  5.   5
  6. 1System Description
  7. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Description of Control Logic
      2. 2.2.2 Behavior Throughout Charge Cycle
      3. 2.2.3 Additional Design Recommendations
      4. 2.2.4 Simulation Results
    3. 2.3 Highlighted Products
      1. 2.3.1 TPSI3052-Q1
      2. 2.3.2 TLV7011
      3. 2.3.3 UCC27517A-Q1
  8. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
    2. 3.2 Test Setup
    3. 3.3 Test Results
  9. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Documentation Support
    3. 4.3 Support Resources
    4. 4.4 Trademarks
  10. 5About the Authors
  11. 6Revision History

2.3.3 UCC27517A-Q1

The UCC27517A-Q1 single-channel high-speed low-side gate-driver device effectively drives MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC27517A-Q1 sources and sinks high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13-ns.

The UCC27517A-Q1 device handles –5 V at input.

The UCC27517A-Q1 provides 4-A source and 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12-V.

The UCC27517A-Q1 operates over a wide VDD range of 4.5-V to 18-V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds the output low outside VDD operating range. The ability to operate at low voltage levels such as below 5-V, along with best-in-class switching characteristics, is especially designed for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.