TIDUFF3 October   2025

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
    1. 1.1 Key System Specifications
      1. 1.1.1 General TI High Voltage Evaluation User Safety Guidelines
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 GaN Power Stage
      2. 2.2.2 Inductor
      3. 2.2.3 Controller
      4. 2.2.4 Heat Sink
    3. 2.3 Highlighted Products
      1. 2.3.1 LMG3100R017
      2. 2.3.2 UCD3138A
      3. 2.3.3 TPSM365R6V5
      4. 2.3.4 TMP61
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
    2. 3.2 Software Requirements
    3. 3.3 Test Setup
    4. 3.4 Test Results
  10. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Tools and Software
    3. 4.3 Documentation Support
    4. 4.4 Support Resources
    5. 4.5 Trademarks
  11. 5About the Author

2.3.1 LMG3100R017

The LMG3100 device is a 100V, 97A Gallium Nitride (GaN) FET with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN-FET driver.Table 2-1 details the key features and benefits for this design.

Table 2-1 Key Features and Benefits of LMG3100R017 in TIDA-050089
FEATURE BENEFIT
Integrated 1.7mΩ, 90V GaN FET for 97A operation Low RDS(on) enables lower conduction loss is SR FET
Integrated GaN FET and GaN driver Minimized package parasitic elements enable ultra-fast switching for reduced switching losses.
Enables small design in quarter brick form factor
LMG3100 incorporates a high-side level shifter and bootstrap circuit Two LMG3100 devices can be used to form a half bridge without needing an additional level shifter and bootstrap diode
Single 5V gate driver supply with bootstrap voltage clamping and undervoltage lockout Easy power management. UVLO provides simultaneous shutdown of high-side and low-side GaN FET in case of gate driver undervoltage
LMG3100 optimized pinout Easy PCB layout with minimum inductance for reduced switching losses
Two exposed GaN dies on top (SW and PGND) Realize lower top thermal resistance. Accepts both sides cooling, enabling easy thermal design
LMG3100 provides different RDS(on) variants in same package Easy to replace the devices in the case of efficiency tuning at mid-load and full-load