SLUSEE5C January   2022  – December 2022 TPS4811-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  Charge Pump and Gate Driver output (VS, PU, PD, BST, SRC)
      2. 9.3.2  Capacitive Load Driving
        1. 9.3.2.1 FET Gate Slew Rate Control
        2. 9.3.2.2 Using Precharge FET - (with TPS48111-Q1 Only)
      3. 9.3.3  Overcurrent and Short-Circuit Protection
        1. 9.3.3.1 Overcurrent Protection With Auto-Retry
        2. 9.3.3.2 Overcurrent Protection With Latch-Off
      4. 9.3.4  Short-Circuit Protection
      5. 9.3.5  Analog Current Monitor Output (IMON)
      6. 9.3.6  Overvoltage (OV) and Undervoltage Protection (UVLO)
      7. 9.3.7  Device Functional Mode (Shutdown Mode)
      8. 9.3.8  Remote Temperature sensing and Protection (DIODE)
      9. 9.3.9  Output Reverse Polarity Protection
      10. 9.3.10 TPS4811x-Q1 as a Simple Gate Driver
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application: Driving HVAC PTC Heater Load on KL40 Line in Power Distribution Unit
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
    3. 10.3 Typical Application: Driving B2B FETs With Pre-charging the Output Capacitance
      1. 10.3.1 Design Requirements
      2. 10.3.2 External Component Selection
      3. 10.3.3 Application Curves
    4. 10.4 Power Supply Recommendations
    5. 10.5 Layout
      1. 10.5.1 Layout Guidelines
      2. 10.5.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Receiving Notification of Documentation Updates
    2. 11.2 Support Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • AEC-Q100 qualified with the following results
    • Device temperature grade 1:
      –40°C to +125°C ambient operating temperature range
  • Functional Safety-Capable
  • 3.5-V to 80-V input range (100-V absolute maximum)
  • Output reverse polarity protection down to –30 V
  • Integrated 12-V charge pump with 100-µA capacity
  • Low 1.6-µA shutdown current (EN/UVLO = Low)
  • Strong pull up (3.7 A) and pull down (4 A) gate driver
  • Drives external back-to-back N-Channel MOSFETs
  • Variant with Integrated pre-charge switch driver (TPS48111-Q1) to drive capacitive loads
  • Two-level adjustable overcurrent protection (IWRN, ISCP) with adjustable circuit breaker timer (TMR) and fault flag output (FLT_I)
  • Fast short-circuit protection: 1.2 µs (TPS48111-Q1), 4 µs (TPS48110-Q1)

  • Accurate analog current monitor output (IMON) –
    ±2 % at 30 mV VSNS

  • Accurate, Adjustable undervoltage lockout (UVLO) and overvoltage protection (OV) –
    < ±2 %
  • Remote overtemperature sensing (DIODE) and protection with fault flag output (FLT_T)