Product details

Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
Rating Catalog Architecture Gate driver Control interface 1xPWM, 3xPWM, 6xPWM Gate drive (A) 1 Vs (min) (V) 9 Vs ABS (max) (V) 102 Features Hardware Management I/F, SPI/I2C, Smart Gate Drive Operating temperature range (°C) -40 to 125
WQFN (RTV) 32 25 mm² 5 x 5
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional integrated buck regulator
    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated LM5008A buck regulator
    • 6 to 95-V operating voltage range
    • 2.5 to 75-V, 350-mA output capability
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)
  • 9 to 100-V, Triple half-bridge gate driver
    • Optional integrated buck regulator
    • Optional triple low-side current shunt amplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMI performance
    • VGS handshake and minimum dead-time insertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation through strong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cycle control
    • Low-side linear regulator
  • Integrated LM5008A buck regulator
    • 6 to 95-V operating voltage range
    • 2.5 to 75-V, 350-mA output capability
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40 V/V)
    • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltage lockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFET VDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault (GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Fault condition indicator (nFAULT)

The DRV835x family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV835x uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

The DRV835x family of devices are highly-integrated gate drivers for three-phase brushless DC (BLDC) motor applications. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device variants provide optional integrated current shunt amplifiers to support different motor control schemes and a buck regulator to power the gate driver or external controller.

The DRV835x uses smart gate drive (SGD) architecture to decrease the number of external components that are typically necessary for MOSFET slew rate control and protection circuits. The SGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibility in decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects against gate short circuit conditions through VGS monitors. A strong gate pulldown circuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simple interfacing to the external controller. These modes can decrease the number of outputs required of the controller for the motor driver PWM control signals. This family of devices also includes 1x PWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal block commutation table.

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Technical documentation

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Type Title Date
* Data sheet DRV835x 100-V Three-Phase Smart Gate Driver datasheet (Rev. A) PDF | HTML 24 Jun 2019
Application note Best Practices for Board Layout of Motor Drivers (Rev. B) PDF | HTML 14 Oct 2021
Application note Hardware Design Considerations for an Electric Bicycle using BLDC Motor (Rev. B) 23 Jun 2021
Application note System Design Considerations for High-Power Motor Driver Applications PDF | HTML 22 Jun 2021
Application brief MSP430 and DRV83xx Selection Guide for Power Tools (Rev. A) PDF | HTML 14 Jun 2021
Application brief Brushless-DC Made Simple – Sensored Motor Control (Rev. B) PDF | HTML 13 Apr 2021
Application note Understanding Smart Gate Drive (Rev. D) 01 Mar 2021
Technical article A basic brushless gate driver design – part 3: integrated vs. discrete half bridge PDF | HTML 16 Dec 2020
Technical article Anything but discrete: How to simplify 48-V to 60-V DC-fed three-phase inverter de PDF | HTML 01 Feb 2019
Application brief Low Voltage Motor Drive Operation With Smart Gate Drive 20 Dec 2018
EVM User's guide DRV8350x-EVM User’s Guide (Rev. A) 19 Dec 2018
Application brief DRV835x Split Supply Power Topology 26 Sep 2018
Application note Architecture for Brushless-DC Gate Drive Systems (Rev. A) 22 Aug 2018
Application brief Field Oriented Control Made Easy for Brushless DC Motors Using Smart Gate Drive (Rev. B) 22 Aug 2018
Application note Cut-Off Switch in High-Current Motor-Drive Applications (Rev. A) 20 Aug 2018
User guide DRV8350x-EVM GUI User’s Guide 10 Jul 2017
EVM User's guide DRV8350x-EVM Sensored Software User's Guide 10 Jul 2017
EVM User's guide DRV8350x-EVM Sensorless Software User's Guide 10 Jul 2017

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

DRV8350H-EVM — DRV8350H three-phase smart gate driver evaluation module

The DRV8350H-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8350H gate driver and CSD19532Q5B NexFET™ power blocks. 

The module has individual DC bus and phase voltage sense as well as an external, individual low-side current shunt amplifier, making this evaluation module ideal for (...)

User guide: PDF
Not available on TI.com
Evaluation board

DRV8350S-EVM — DRV8350S three-phase smart gate driver evaluation module

The DRV8350S-EVM is a 15A, 3-phase brushless DC drive stage based on the DRV8350S gate driver and CSD19532Q5B NexFET™ power blocks. 

The module has individual DC bus and phase voltage sense as well as an external, individual low-side current shunt amplifier, making this evaluation module ideal for (...)

User guide: PDF
Not available on TI.com
Calculation tool

BLDC-MAX-QG-MOSFET-CALCULATOR Calculate the maximum QG MOSFET for your motor driver

Calculate the maximum QG MOSFET that can be driven based on the PWM switching frequency, algorithm type, and additional external capacitance.
Supported products & hardware

Supported products & hardware

Products
BLDC drivers
DRV8320 65-V max 3-phase smart gate driver DRV8320R 65-V max 3-phase smart gate driver with buck regulator DRV8323 65-V max 3-phase smart gate driver with current shunt amplifiers DRV8323R 65-V max 3-phase smart gate driver with buck regulator & current shunt amplifiers DRV8329 60-V 1000/2000 mA 3-phase gate driver with single current sense amplifier DRV8334 60-V 1000-mA to 2000-mA 3-phase gate driver with accurate current sensing DRV8340-Q1 Automotive 12-V to 24-V battery 3-phase smart gate driver DRV8343-Q1 Automotive 12-V to 24-V battery 3-phase smart gate driver with current shunt amplifiers DRV8350 102-V max 3-phase smart gate driver DRV8350F 102-V max 3-phase Functional Safety Quality-Managed smart gate driver DRV8350R 102-V max 3-phase smart gate driver with buck regulator DRV8353 102-V max 3-phase smart gate driver with current shunt amplifiers DRV8353F 102-V max 3-phase Functional Safety Quality-Managed smart gate driver with 3x CSA DRV8353M 102-V max 3-phase smart gate driver with current shunt amplifiers and extended temperature DRV8353R 102-V max 3-phase smart gate driver with buck regulator & current shunt amplifiers
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WQFN (RTV) 32 View options

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