NEW

DRV8300

ACTIVE

100-V max simple 3-phase gate driver with bootstrap diodes

Top

Product details

Parameters

Rating Catalog Control method External Control Architecture Gate Driver Control interface 6xPWM, 3xPWM Gate drive (A) 0.75 Vs (Min) (V) 5 Vs ABS (Max) (V) 100 Features Bootstrap Diode Operating temperature range (C) -40 to 125 open-in-new Find other Brushless DC (BLDC) motor drivers

Package | Pins | Size

TSSOP (PW) 20 42 mm² 6.5 x 6.4 open-in-new Find other Brushless DC (BLDC) motor drivers

Features

  • Triple Half-Bridge Gate driver
    • Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS)
  • Integrated Bootstrap Diodes (DRV8300D devices)
  • Supports Inverting and Non-Inverting INLx inputs
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A sink current
  • Supports upto 15s battery powered applications
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 115-V
  • Supports negative trasients upto -22-V on SHx pins
  • Buit-in cross conduction prevention
  • Adjustable deadtime through DT pin for QFN package variants
  • Fixed deadtime insertion of 200 nS for TSSOP package variants
  • Supports 3.3-V, and 5-V logic inputs with 20-V Abs Max
  • 4 nS typical propogation delay matching
  • Compact QFN and TSSOP packages
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)

All trademarks are the property of their respective owners.

open-in-new Find other Brushless DC (BLDC) motor drivers

Description

DRV8300 family of devices provide three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs. GVDD is used to generate gate drive voltage for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (115-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

open-in-new Find other Brushless DC (BLDC) motor drivers
Download
Information

Request samples

Preproduction samples are available (PDRV8300DIPWR). Request now

Technical documentation

= Top documentation for this product selected by TI
No results found. Please clear your search and try again. View all 7
Type Title Date
* Datasheet DRV8300: Three-Phase BLDC Gate Driver datasheet (Rev. A) Dec. 14, 2020
More literature DRV8300DIPW-EVM EU RoHS Declaration of Conformity (DoC) Dec. 23, 2020
Technical articles A basic brushless gate driver design – part 3: integrated vs. discrete half bridges Dec. 16, 2020
Application note Brushless-DC Motor Driver Considerations and Selection Guide Jun. 01, 2020
Technical articles Connectivity helps integrate intelligent motor control on a single MCU Jun. 06, 2018
Technical articles Cut the power and complexity of your appliance designs Feb. 06, 2018
Technical articles Six weird ways to design with a brushless-DC driver Aug. 28, 2017

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Hardware development

EVALUATION BOARD Download
Description

The DRV8300DIPW-EVM is a 30A, 3-phase brushless DC drive stage based on the DRV8300DIPW gate driver for BLDC motors. The DRV8300DIPW incorporates three diodes for bootstrap operation without the need for external diodes.

The EVM includes three current shunt amplifiers for low-side current measurement (...)

Features
  • 6 - 100V Operation, 30A peak H-Bridge ouput current
  • On-board CSAs for three-phase low-side current measurement
  • On-board buck for GVDD generation and device internal bootstrap diodes
  • Supply LEDs, Fault LEDs, and temperature sensor for user feedback
  • C2000 (LAUNCHXL-F280049C) sensored trapezoidal firmware (...)

CAD/CAE symbols

Package Pins Download
TSSOP (PW) 20 View options
VQFN (RGE) 24 View options

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring

Recommended products may have parameters, evaluation modules or reference designs related to this TI product.

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos