Product details

Number of channels (#) 2 Power switch MOSFET Peak output current (A) 5 Input VCC (Min) (V) 3.5 Input VCC (Max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Prop delay (ns) 25 Input threshold TTL Channel input logic Inverting, Non-Inverting, Combination Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (Typ) 224 Driver configuration Dual, Independent
Number of channels (#) 2 Power switch MOSFET Peak output current (A) 5 Input VCC (Min) (V) 3.5 Input VCC (Max) (V) 14 Features Negative Output Voltage Capability Operating temperature range (C) -40 to 125 Rise time (ns) 14 Fall time (ns) 12 Prop delay (ns) 25 Input threshold TTL Channel input logic Inverting, Non-Inverting, Combination Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (Typ) 224 Driver configuration Dual, Independent
SOIC (D) 8 19 mm² 4.9 x 3.9 WSON (DPR) 10 16 mm² 4 x 4
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)
  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

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UCC27524A ACTIVE 5-A/5-A dual-channel gate driver with 5-V UVLO, enable, and negative input voltage handling This product has higher drive current with 5-A sink/source, as well as faster propagation delay (13-ns) , rise time (7-ns) and fall time (6-ns).

Technical documentation

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Type Title Date
* Data sheet LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability datasheet (Rev. B) PDF | HTML 05 Nov 2012
Technical article Managing power-supply noise with a 30-V gate driver 07 Dec 2021
Application note External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application note Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018

Design & development

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Evaluation board

UCC27423-4-5-Q1EVM — UCC2742xQ1 Dual 4-A High-Speed Low-Side MOSFET Drivers With Enable Evaluation Module (EVM)

The UCC2742xQ1 EVM is a high-speed dual MOSFET evaluation module that provides a test platform for a quick and easy startup of the UCC2742xQ1 driver. Powered by a single 4V to 15V external supply, and featuring a comprehensive set of test points and jumpers. All of the devices have separate input (...)
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Simulation model

LM5110-1M PSpice Transient Model (Rev. A)

SNVM295A.ZIP (57 KB) - PSpice Model
Simulation model

LM5110-2M PSpice Transient Model

SNVM308.ZIP (47 KB) - PSpice Model
Simulation model

LM5110-3M PSpice Transient Model

SNVM309.ZIP (47 KB) - PSpice Model
Simulation model

LM5110-1M TINA-TI Transient Reference Design

SNVM406.TSC (135 KB) - TINA-TI Reference Design
Simulation model

LM5110-1M TINA-TI Transient Spice Model

SNVM407.ZIP (10 KB) - TINA-TI Spice Model
Simulation model

LM5110-2M TINA-TI Transient Reference Design

SNVM408.TSC (135 KB) - TINA-TI Reference Design
Simulation model

LM5110-2M TINA-TI Transient Spice Model

SNVM409.ZIP (10 KB) - TINA-TI Spice Model
Simulation model

LM5110-3M TINA-TI Transient Reference Design

SNVM412.TSC (136 KB) - TINA-TI Reference Design
Simulation model

LM5110-3M TINA-TI Transient Spice Model

SNVM413.ZIP (10 KB) - TINA-TI Spice Model
Simulation model

LM5110_2M Unencrypted PSpice Transient Model

SNVMAC9.ZIP (1 KB) - PSpice Model
Simulation model

LM5110_1M Unencrypted PSpice Transient Model

SNVMAD0.ZIP (1 KB) - PSpice Model
Simulation model

LM5110_3M Unencrypted PSpice Transient Model

SNVMAD1.ZIP (1 KB) - PSpice Model
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Package Pins Download
SOIC (D) 8 View options
WSON (DPR) 10 View options

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