Product details

Number of channels (#) 2 Power switch MOSFET, IGBT, GaNFET Peak output current (A) 5 Input VCC (Min) (V) 4.5 Input VCC (Max) (V) 26 Features Enable Pin Operating temperature range (C) -40 to 150 Rise time (ns) 7 Fall time (ns) 6 Prop delay (ns) 13 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (Typ) 4 Driver configuration Dual, Non-Inverting
Number of channels (#) 2 Power switch MOSFET, IGBT, GaNFET Peak output current (A) 5 Input VCC (Min) (V) 4.5 Input VCC (Max) (V) 26 Features Enable Pin Operating temperature range (C) -40 to 150 Rise time (ns) 7 Fall time (ns) 6 Prop delay (ns) 13 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (Typ) 4 Driver configuration Dual, Non-Inverting
SOIC (D) 8 19 mm² 4.9 x 3.9 SOIC (D) 8
  • Typical 5-A peak source and sink drive current for each channel
  • Input and enable pins capable of handling –10 V
  • Output capable of handling –2-V transients
  • Absolute maximum VDD voltage: 30 V
  • Wide VDD operating range from 4.5 V to 26 V with UVLO
  • Two independent gate drive channels
  • Independent enable function for each output
  • Hysteretic-logic thresholds for high noise immunity
  • VDD independent input thresholds (TTL compatible)
  • Fast propagation delays (17-ns typical)
  • Fast rise and fall times (3.5-ns and 6-ns typical)
  • 1-ns typical delay matching between the two channels
  • Two channels can be paralleled for higher drive current
  • SOIC8 and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 150°C
  • Typical 5-A peak source and sink drive current for each channel
  • Input and enable pins capable of handling –10 V
  • Output capable of handling –2-V transients
  • Absolute maximum VDD voltage: 30 V
  • Wide VDD operating range from 4.5 V to 26 V with UVLO
  • Two independent gate drive channels
  • Independent enable function for each output
  • Hysteretic-logic thresholds for high noise immunity
  • VDD independent input thresholds (TTL compatible)
  • Fast propagation delays (17-ns typical)
  • Fast rise and fall times (3.5-ns and 6-ns typical)
  • 1-ns typical delay matching between the two channels
  • Two channels can be paralleled for higher drive current
  • SOIC8 and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 150°C

The UCC27624 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT, SiC, and GaN power switches. UCC27624 has a typical peak drive strength of 5 A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The UCC27624’s fast propagation delay (17-ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27624 can handle –10 V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The UCC27624’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.

The UCC27624 also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

The UCC27624 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT, SiC, and GaN power switches. UCC27624 has a typical peak drive strength of 5 A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The UCC27624’s fast propagation delay (17-ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27624 can handle –10 V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The UCC27624’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.

The UCC27624 also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

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Technical documentation

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Type Title Date
* Data sheet UCC27624 30-V, 5-A Dual-Channel Low-Side Gate Driver with –10-V Input Capability datasheet (Rev. B) 07 Dec 2021
Technical article Managing power-supply noise with a 30-V gate driver 07 Dec 2021
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver 10 Nov 2021
User guide Using the UCC27624EVM 16 Sep 2020
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018

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Evaluation board

UCC27624EVM — UCC27624 evaluation module dual-channel 30-V, 5-A high-speed low-side gate driver

The UCC27624 evaluation module (EVM) is designed for evaluation of TI's 30-V, 5-A single-channel gate driver. This EVM is targeted to evaluate the driver IC against datasheet parameters. The driver IC may evaluated against various capacitive and resistive loads. The EVM may be configured to (...)

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UCC27624 SIMPLIS Model

SLUM795.ZIP (34 KB) - SIMPLIS Model
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PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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