TL081H

ACTIVE

Single, 40-V, 5.25-MHz, 4-mV offset voltage, 20-V/µs, In to V+ op amp with -40°C to 125°C operation

Product details

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V+ GBW (typ) (MHz) 5.25 Slew rate (typ) (V/µs) 20 Vos (offset voltage at 25°C) (max) (mV) 4 Iq per channel (typ) (mA) 0.9375 Vn at 1 kHz (typ) (nV√Hz) 37 Rating Catalog Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 2 Features Cost Optimized, EMI Hardened, Standard Amps Input bias current (max) (pA) 120 CMRR (typ) (dB) 105 Iout (typ) (A) 0.026 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 1.5 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 0.105 Output swing headroom (to positive supply) (typ) (V) 0.115
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail In to V+ GBW (typ) (MHz) 5.25 Slew rate (typ) (V/µs) 20 Vos (offset voltage at 25°C) (max) (mV) 4 Iq per channel (typ) (mA) 0.9375 Vn at 1 kHz (typ) (nV√Hz) 37 Rating Catalog Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 2 Features Cost Optimized, EMI Hardened, Standard Amps Input bias current (max) (pA) 120 CMRR (typ) (dB) 105 Iout (typ) (A) 0.026 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 1.5 Input common mode headroom (to positive supply) (typ) (V) 0 Output swing headroom (to negative supply) (typ) (V) 0.105 Output swing headroom (to positive supply) (typ) (V) 0.115
SOIC (D) 8 29.4 mm² 4.9 x 6 SOT-23 (DBV) 5 8.12 mm² 2.9 x 2.8 SOT-SC70 (DCK) 5 4.2 mm² 2 x 2.1
  • High slew rate: 20 V/µs (TL08xH, typ)
  • Low offset voltage: 1 mV (TL08xH, typ)
  • Low offset voltage drift: 2 µV/°C
  • Low power consumption: 940 µA/ch (TL08xH, typ)
  • Wide common-mode and differential voltage ranges
    • Common-mode input voltage range includes VCC+
  • Low input bias and offset currents
  • Low noise: Vn = 18 nV/√Hz (typ) at f = 1 kHz
  • Output short-circuit protection
  • Low total harmonic distortion: 0.003% (typ)
  • Wide supply voltage: ±2.25 V to ±20 V, 4.5 V to 40 V
  • High slew rate: 20 V/µs (TL08xH, typ)
  • Low offset voltage: 1 mV (TL08xH, typ)
  • Low offset voltage drift: 2 µV/°C
  • Low power consumption: 940 µA/ch (TL08xH, typ)
  • Wide common-mode and differential voltage ranges
    • Common-mode input voltage range includes VCC+
  • Low input bias and offset currents
  • Low noise: Vn = 18 nV/√Hz (typ) at f = 1 kHz
  • Output short-circuit protection
  • Low total harmonic distortion: 0.003% (typ)
  • Wide supply voltage: ±2.25 V to ±20 V, 4.5 V to 40 V

The TL08xH (TL081H, TL082H, and TL084H) family of devices are the next-generation versions of the industry-standard TL08x (TL081, TL082, and TL084) devices. These devices provide outstanding value for cost-sensitive applications, with features including low offset (1 mV, typical), high slew rate (20 V/µs), and common-mode input to the positive supply. High ESD (1.5 kV, HBM), integrated EMI and RF filters, and operation across the full –40°C to 125°C enable the TL08xH devices to be used in the most rugged and demanding applications.

The TL08xH (TL081H, TL082H, and TL084H) family of devices are the next-generation versions of the industry-standard TL08x (TL081, TL082, and TL084) devices. These devices provide outstanding value for cost-sensitive applications, with features including low offset (1 mV, typical), high slew rate (20 V/µs), and common-mode input to the positive supply. High ESD (1.5 kV, HBM), integrated EMI and RF filters, and operation across the full –40°C to 125°C enable the TL08xH devices to be used in the most rugged and demanding applications.

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* Data sheet TL08xx FET-Input Operational Amplifiers datasheet (Rev. M) PDF | HTML 13 Dec 2021

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