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TPS28225-Q1

ACTIVE

Automotive 4-A, 27-V half bridge gate driver with 4-V UVLO for synchronous rectification

Product details

Bootstrap supply voltage (max) (V) 33 Power switch MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 8 Peak output current (A) 4 Operating temperature range (°C) -40 to 105 Undervoltage lockout (typ) (V) 3.5 Rating Automotive Propagation delay time (µs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Switch node voltage (V) 0 Features (x1) PWM, Synchronous Rectification Driver configuration Single
Bootstrap supply voltage (max) (V) 33 Power switch MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 8 Peak output current (A) 4 Operating temperature range (°C) -40 to 105 Undervoltage lockout (typ) (V) 3.5 Rating Automotive Propagation delay time (µs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Switch node voltage (V) 0 Features (x1) PWM, Synchronous Rectification Driver configuration Single
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) VSON (DRB) 8 9 mm² (3 mm × 3 mm)
  • Qualified for automotive applications
  • Drives two N-channel MOSFETs with 14-ns adaptive dead time
  • Wide gate drive voltage: 4.5 V up to 8.8 V with best efficiency at 7 V to 8 V
  • Wide power system train input voltage: 3 V up to 27 V
  • Wide input PWM signals: 2-V up to 13.2-V amplitude
  • Capable of driving MOSFETs with ≥40-A current per phase
  • High frequency operation: 14-ns propagation delay and 10-ns rise or fall time allows FSW up to 2 MHz
  • Capable of propagating <30-ns input PWM pulses
  • Low-side driver sink on-resistance (0.4 Ω) prevents dV/dT related shoot-through current
  • Three-state PWM input for power stage shutdown
  • Space saving enable (input) and power good (output) signals on the same pin
  • Thermal shutdown
  • UVLO protection
  • Internal bootstrap diode
  • Economical SOIC-8 and thermally enhanced 3-mm × 3-mm VSON-8 packages
  • High performance replacement for popular three-state input drivers
  • Qualified for automotive applications
  • Drives two N-channel MOSFETs with 14-ns adaptive dead time
  • Wide gate drive voltage: 4.5 V up to 8.8 V with best efficiency at 7 V to 8 V
  • Wide power system train input voltage: 3 V up to 27 V
  • Wide input PWM signals: 2-V up to 13.2-V amplitude
  • Capable of driving MOSFETs with ≥40-A current per phase
  • High frequency operation: 14-ns propagation delay and 10-ns rise or fall time allows FSW up to 2 MHz
  • Capable of propagating <30-ns input PWM pulses
  • Low-side driver sink on-resistance (0.4 Ω) prevents dV/dT related shoot-through current
  • Three-state PWM input for power stage shutdown
  • Space saving enable (input) and power good (output) signals on the same pin
  • Thermal shutdown
  • UVLO protection
  • Internal bootstrap diode
  • Economical SOIC-8 and thermally enhanced 3-mm × 3-mm VSON-8 packages
  • High performance replacement for popular three-state input drivers

The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions.

The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration.

The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C.

The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions.

The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration.

The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C.

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Technical documentation

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Simulation model

TPS28225 PSpice Transient Model

SLUM287.ZIP (36 KB) - PSpice model
Supported products & hardware
Simulation model

TPS28225 Unencrypted PSpice Transient Model

SLUM496.ZIP (3 KB) - PSpice model
Supported products & hardware
Package Pins CAD symbols, footprints & 3D models
SOIC (D) 8 Ultra Librarian
VSON (DRB) 8 Ultra Librarian

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