Product details

Bus voltage (Max) (V) 27 Power switch MOSFET Input VCC (Min) (V) 4.5 Input VCC (Max) (V) 8 Peak output current (A) 6 Rise time (ns) 10 Operating temperature range (C) -40 to 105 Undervoltage lockout (Typ) 3.5 Rating Automotive Number of channels (#) 1 Fall time (ns) 10 Prop delay (ns) 14 Iq (uA) 350 Negative voltage handling at HS pin (V) 0 Features Synchronous Rectification Driver configuration Single
Bus voltage (Max) (V) 27 Power switch MOSFET Input VCC (Min) (V) 4.5 Input VCC (Max) (V) 8 Peak output current (A) 6 Rise time (ns) 10 Operating temperature range (C) -40 to 105 Undervoltage lockout (Typ) 3.5 Rating Automotive Number of channels (#) 1 Fall time (ns) 10 Prop delay (ns) 14 Iq (uA) 350 Negative voltage handling at HS pin (V) 0 Features Synchronous Rectification Driver configuration Single
SOIC (D) 8 19 mm² 4.9 x 3.9 VSON (DRB) 8 9 mm² 3 x 3
  • Qualified for automotive applications
  • Drives two N-channel MOSFETs with 14-ns adaptive dead time
  • Wide gate drive voltage: 4.5 V up to 8.8 V with best efficiency at 7 V to 8 V
  • Wide power system train input voltage: 3 V up to 27 V
  • Wide input PWM signals: 2-V up to 13.2-V amplitude
  • Capable of driving MOSFETs with ≥40-A current per phase
  • High frequency operation: 14-ns propagation delay and 10-ns rise or fall time allows FSW up to 2 MHz
  • Capable of propagating <30-ns input PWM pulses
  • Low-side driver sink on-resistance (0.4 Ω) prevents dV/dT related shoot-through current
  • Three-state PWM input for power stage shutdown
  • Space saving enable (input) and power good (output) signals on the same pin
  • Thermal shutdown
  • UVLO protection
  • Internal bootstrap diode
  • Economical SOIC-8 and thermally enhanced 3-mm × 3-mm VSON-8 packages
  • High performance replacement for popular three-state input drivers
  • Qualified for automotive applications
  • Drives two N-channel MOSFETs with 14-ns adaptive dead time
  • Wide gate drive voltage: 4.5 V up to 8.8 V with best efficiency at 7 V to 8 V
  • Wide power system train input voltage: 3 V up to 27 V
  • Wide input PWM signals: 2-V up to 13.2-V amplitude
  • Capable of driving MOSFETs with ≥40-A current per phase
  • High frequency operation: 14-ns propagation delay and 10-ns rise or fall time allows FSW up to 2 MHz
  • Capable of propagating <30-ns input PWM pulses
  • Low-side driver sink on-resistance (0.4 Ω) prevents dV/dT related shoot-through current
  • Three-state PWM input for power stage shutdown
  • Space saving enable (input) and power good (output) signals on the same pin
  • Thermal shutdown
  • UVLO protection
  • Internal bootstrap diode
  • Economical SOIC-8 and thermally enhanced 3-mm × 3-mm VSON-8 packages
  • High performance replacement for popular three-state input drivers

The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions.

The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration.

The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C.

The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions.

The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration.

The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C.

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Technical documentation

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Type Title Date
* Data sheet TPS28225-Q1 Automotive High-Frequency 4-A Sink Synchronous MOSFET Drivers datasheet (Rev. D) PDF | HTML 13 Dec 2021
Application note External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application note Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018
Technical article How to achieve higher system robustness in DC drives, part 1: negative voltage 17 Apr 2018

Design & development

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Simulation model

TPS28225 PSpice Transient Model

SLUM287.ZIP (36 KB) - PSpice Model
Simulation model

TPS28225 Unencrypted PSpice Transient Model

SLUM496.ZIP (3 KB) - PSpice Model
Simulation tool

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SOIC (D) 8 View options
SON (DRB) 8 View options

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