Product details

Number of channels (#) 1 Isolation rating (Vrms) 3750 Power switch SiCFET, MOSFET, IGBT Peak output current (A) 4.5 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 6000 DIN V VDE V 0884-10 working voltage (Vpk) 900 Output VCC/VDD (Max) (V) 33 Output VCC/VDD (Min) (V) 14 Prop delay (ns) 70 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12, 8
Number of channels (#) 1 Isolation rating (Vrms) 3750 Power switch SiCFET, MOSFET, IGBT Peak output current (A) 4.5 DIN V VDE V 0884-10 transient overvoltage rating (Vpk) 6000 DIN V VDE V 0884-10 working voltage (Vpk) 900 Output VCC/VDD (Max) (V) 33 Output VCC/VDD (Min) (V) 14 Prop delay (ns) 70 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 12, 8
SOIC (DWY) 6 35 mm² 4.86 x 7.5
  • AEC-Q100 qualified for automotive applications
  • 3.75-kVRMS single channel isolated gate driver with opto-compatible input
  • Pin-to-pin, drop in upgrade for opto isolated gate drivers
  • 4.5-A source, 5.3-A sink, peak output current
  • Maximum 33-V output driver supply voltage
  • 8-V (B) or 12-V VCC UVLO options
  • Rail-to-rail output
  • 105-ns (maximum) propagation delay
  • 25-ns (maximum) part-to-part delay matching
  • 35-ns (maximum) pulse width distortion
  • 150-kV/µs (minimum) common-mode transient immunity (CMTI)
  • Isolation barrier life > 50 Years
  • 13-V reverse polarity voltage handling capability on input stage supporting interlock
  • Stretched SO-6 package with > 8.5-mm creepage and clearance
  • Operating junction temperature, TJ: –40°C to +150°C
  • Functional Safety-Capable
  • Safety-related certifications:
    • 6000-VPK basic isolation per DIN V VDE V0884-11: 2017-01 (In Progress)
    • 3.75-kVRMS isolation for 1 minute per UL 1577
  • AEC-Q100 qualified for automotive applications
  • 3.75-kVRMS single channel isolated gate driver with opto-compatible input
  • Pin-to-pin, drop in upgrade for opto isolated gate drivers
  • 4.5-A source, 5.3-A sink, peak output current
  • Maximum 33-V output driver supply voltage
  • 8-V (B) or 12-V VCC UVLO options
  • Rail-to-rail output
  • 105-ns (maximum) propagation delay
  • 25-ns (maximum) part-to-part delay matching
  • 35-ns (maximum) pulse width distortion
  • 150-kV/µs (minimum) common-mode transient immunity (CMTI)
  • Isolation barrier life > 50 Years
  • 13-V reverse polarity voltage handling capability on input stage supporting interlock
  • Stretched SO-6 package with > 8.5-mm creepage and clearance
  • Operating junction temperature, TJ: –40°C to +150°C
  • Functional Safety-Capable
  • Safety-related certifications:
    • 6000-VPK basic isolation per DIN V VDE V0884-11: 2017-01 (In Progress)
    • 3.75-kVRMS isolation for 1 minute per UL 1577

The UCC23313-Q1 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 3.75-kVRMS basic isolation rating. The high supply voltage range of 33 V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23313-Q1 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. It is offered in a stretched SO6 package with > 8.5-mm creepage and clearance, and a mold compound from material group I, which has a comparative tracking index (CTI) > 600 V. UCC23313-Q1’s high performance and reliability makes it ideal for use in automotive motor drives such as the traction inverter, on-board chargers, DC charging stations, and automotive HVAC and heating systems. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers.

The UCC23313-Q1 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 3.75-kVRMS basic isolation rating. The high supply voltage range of 33 V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23313-Q1 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. It is offered in a stretched SO6 package with > 8.5-mm creepage and clearance, and a mold compound from material group I, which has a comparative tracking index (CTI) > 600 V. UCC23313-Q1’s high performance and reliability makes it ideal for use in automotive motor drives such as the traction inverter, on-board chargers, DC charging stations, and automotive HVAC and heating systems. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers.

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UCC23513EVM-014 — UCC23513 3-A, 5-kVrms, single channel isolated gate driver with opto-compatible input EVM

UCC23513EVM-014 evaluation module is designed for evaluation of TI's 5-kVRMS isolated single-channel gate driver with opto compatible input, UCC23513. The input is current driven, requiring between 7 mA and 16 mA for device turn-on, and can be reverse biased for turn-off. The device is capable of (...)
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