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UCC27624-Q1

ACTIVE

Automotive 30V VDD, 5A/5A dual-channel low-side driver with 4V UVLO and low propagation delay

Product details

Number of channels 2 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin Operating temperature range (°C) -40 to 150 Rise time (ns) 6 Fall time (ns) 10 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -10 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
Number of channels 2 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin Operating temperature range (°C) -40 to 150 Rise time (ns) 6 Fall time (ns) 10 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -10 Rating Automotive Undervoltage lockout (typ) (V) 4 Driver configuration Dual, Non-Inverting
VSSOP (DGK) 8 14.7 mm² (3 mm × 4.9 mm) WSON (DSD) 8 9 mm² (3 mm × 3 mm) HVSSOP (DGN) 8 14.7 mm² (3 mm × 4.9 mm) HSOIC (DDA) 8 29.4 mm² (4.9 mm × 6 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level H1C
    • Device CDM ESD Classification Level C6
  • Typical 5A peak source and sink drive current for each channel
  • Input and enable pins capable of handling –10V
  • Output capable of handling –2V transients
  • Absolute maximum VDD voltage: 30V
  • Wide VDD operating range from 4.5V to 26V with UVLO
  • Hysteretic-logic thresholds for high noise immunity
  • VDD independent input thresholds (TTL compatible)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (6ns and 10ns typical)
  • 1ns typical delay matching between the two channels
  • Two channels can be paralleled for higher drive current
  • SOIC8 PowerPAD™ and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 150°C
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified
    • Device Temperature Grade 1
    • Device HBM ESD Classification Level H1C
    • Device CDM ESD Classification Level C6
  • Typical 5A peak source and sink drive current for each channel
  • Input and enable pins capable of handling –10V
  • Output capable of handling –2V transients
  • Absolute maximum VDD voltage: 30V
  • Wide VDD operating range from 4.5V to 26V with UVLO
  • Hysteretic-logic thresholds for high noise immunity
  • VDD independent input thresholds (TTL compatible)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (6ns and 10ns typical)
  • 1ns typical delay matching between the two channels
  • Two channels can be paralleled for higher drive current
  • SOIC8 PowerPAD™ and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 150°C

The UCC27624-Q1 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT, SiC, and GaN power switches. UCC27624-Q1 has a typical peak drive strength of 5A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (17ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27624-Q1 can handle –10V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shutoff by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse transformer and avoid driver malfunction.

The UCC27624-Q1 also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

The UCC27624-Q1 is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT, SiC, and GaN power switches. UCC27624-Q1 has a typical peak drive strength of 5A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (17ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27624-Q1 can handle –10V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shutoff by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse transformer and avoid driver malfunction.

The UCC27624-Q1 also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

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Technical documentation

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Top documentation Type Title Format options Date
* Data sheet UCC27624-Q1 30V, 5A, Dual-Channel, Low-Side Gate Driver with –10V Input Capability For Automotive Applications datasheet (Rev. D) PDF | HTML Mar 23, 2026
Product overview UCC27624: Enabling Higher Efficiency in a Smaller Package (Rev. A) PDF | HTML May 29, 2026
Functional safety information UCC27624-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. B) PDF | HTML May 12, 2026
Application note Riding the Wave of Non-Isolated Gate Drivers in LEVs PDF | HTML Nov 14, 2025
Application note Selecting Gate Drivers for HVAC Systems (Rev. A) PDF | HTML Nov 7, 2025
White paper Driving the Next xEVs With High-Performing Non-Isolated Gate Drivers PDF | HTML Apr 2, 2025
Application note Why use a Gate Drive Transformer? PDF | HTML Mar 4, 2024
Application note Static Magnet Power Supply Design for Magnetic Resonance Imaging Application PDF | HTML Jan 22, 2024
Application note Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML Jan 22, 2024
White paper How to design heating and cooling systems for HEV/EVs (Rev. A) PDF | HTML Jun 21, 2023
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver PDF | HTML Nov 10, 2021
Application brief External Gate Resistor Selection Guide (Rev. A) Feb 28, 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) Feb 28, 2020
Application note Improving Efficiency of DC-DC Conversion through Layout May 7, 2019
Application brief How to overcome negative voltage transients on low-side gate drivers' inputs Jan 18, 2019
Application brief High-Side Cutoff Switches for High-Power Automotive Applications (Rev. A) Nov 26, 2018
Application note PFC Design Choice for On Board Charger Designs May 24, 2018
White paper Driving the future of HEV/EV with high-voltage solutions (Rev. B) May 16, 2018
Application brief Reducing Switching Losses in On-Board Chargers for Electric Vehicles Mar 27, 2018
Application brief Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole Mar 16, 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC27624DGNEVM — UCC27624 evaluation module for dual-channel 30-V, 5-A high-speed low-side gate driver

The UCC27624 evaluation module (EVM) is designed for evaluation of 30-V, 5-A single-channel gate driver. This EVM is targeted to evaluate the driver IC against data sheet parameters. The driver IC may evaluated against various capacitive and resistive loads. The EVM may be configured to parallel (...)

User guide: PDF
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Evaluation board

UCC27624EVM — UCC27624 evaluation module dual-channel 30-V, 5-A high-speed low-side gate driver

The UCC27624 evaluation module (EVM) is designed for evaluation of TI's 30-V, 5-A single-channel gate driver. This EVM is targeted to evaluate the driver IC against datasheet parameters. The driver IC may evaluated against various capacitive and resistive loads. The EVM may be configured to (...)

User guide: PDF | HTML
Supported products & hardware
In stock
Limit:
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Simulation model

UCC27624 PSpice Transient Model

SLUM884.ZIP (32 KB) - PSpice model
Supported products & hardware
Simulation model

UCC27624 SIMPLIS Model

SLUM795.ZIP (34 KB) - SIMPLIS model
Supported products & hardware
Calculation tool

SLURB19 — UCC27624-Q1 Schematic Review Template

Supported products & hardware
Package Pins CAD symbols, footprints & 3D models
VSSOP (DGK) 8 Ultra Librarian
WSON (DSD) 8 Ultra Librarian
HVSSOP (DGN) 8 Ultra Librarian
HSOIC (DDA) 8 Ultra Librarian
SOIC (D) 8 Ultra Librarian

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